Assoc. Prof. Dr. Mohd Ambri Mohamed

Deputy Director,
Research Fellow and Senior Lecturer

Email: ambri@ukm.edu.my
Phone. 03-8911 8157 / 8552
Google Scholar Profile
SCOPUS Profile

 

EDUCATION

Ph.D., Materials Science, Japan Advanced Institute of Science and Technology, March 2010
M.Sc., Materials Science, Japan Advanced Institute of Science and Technology, March 2007
B.Eng., Materials Engineering, Tokyo University of Science, March 2004

 

WORK EXPERIENCES

  • Assistant Professor, Faculty of Engineering, Materials Engineering Department, International Islamic University Malaysia, Apr 2013-Jan 2014.
  • Assistant Professor, School of Materials Science, Japan Advanced Institute of Science and Technology, May 2010-March 2013.
  • Postdoc Researcher, Center for Nano Materials and Technology, JAIST, Apr 2010.
  • Production Engineer, Alps Electric (M) Sdn. Bhd. Apr 2004-March 2005.

 

RESEARCH KEYWORDS

Carbon electronics, Graphene and 2D related materials, 3-5 Semiconductors, MBE technology, Spintronics, Energy Harvesters, Materials Growth, Nano Devices and Characterizations

 

RESEARCH HIGHLIGHT

In our carbon electronics laboratory at IMEN, we explore a variety of emerging nanotechnologies for the “More-than-Moore and “Beyond CMOS” era by exploiting the nanomaterials in particular, “Carbon”. Carbon materials can be in the form of graphite, carbon nanotubes, graphene or fullerene. Its size can be as small as 1 nm, electron mobility as fast as 100 times more compared to Silicon and tensile strength 100 times superior than steel. Depending on the structure of carbon, it can exhibit semiconducting or metallic properties. Therefore, it is possible to fabricate a miniaturized CMOS circuit by only comprising of carbon-based elements, which can behave as n or p-type semiconductor and metallic nanowires interconnects. Carbon-based elements, such as carbon nanotubes and graphene are expected to give a significant contribution to the field of semiconductors. With the trend of miniaturization of electronics devices, our research has led to the development of carbon-based nanoelectromechanical (NEM) switch due to high demand in low power device applications. NEM switch is one of the promising devices to solve the issue of CMOS circuits when dealing with high power consumption. NEM switch is an exciting component in logic circuits, relays, data storage and high-frequency communication due to its excellent properties such as high on-off ratio and low leakage current. In addition, the integration of our developed carbon-based nanogenerators, sensors, supercapacitors, memory devices complement this smart circuits. We are also dealing with other materials such as Zinc Oxide nanowires, 2 dimensional materials 3-5 semiconductors and organic materials. This research will develop a disruptive new approach to welcome the “Beyond CMOS” era in the semiconductor industry for our mobile and ubiquitous society

MEMBERSHIPS

Member of The Japan Society of Applied Physics
Member of The Physical Society of Japan
Member, Electron Devices Chapter, IEEE Malaysia Section
Malaysia Nanotechnology Association
Member, Malaysia Solid State Science Technology
Member, Microscopy Society of Malaysia

 

TEACHING COURSES

  • RRRR 6042 MEMS/NEMS Technology and Devices (PG), UKM
  • RRRR 6032 Applied Nanoelectronics (PG), UKM
  • RARA 6014 Research Methodology (PG), UKM
  • M411 Methods of Instrumental Analysis (PG), JAIST, Japan
  • MME 4215 Semiconductor Materials and Processing (UG), IIUM
  • MME 2207 Solid State Physics and Crystallography (UG), IIUM
  • MME 2503 Materials Science and Engineering (UG), IIUM

 

RESEARCH GRANTS (Principal Researcher)

  1. Vertical-aligned graphene interdigitated for ultra sensitive NEMS LRGS/2015/UKM-UKM/NANOMITE/04/01 – KPM, Jan 2015 – August 2020
  2. Nano energy ahrvester based on carbon-nanocomposites for powering wearable devices, PRGS/1/2019/TK07/UKM/02/1 – KPM
  3. August 2019 – July 2021
  4. Epitaxial growth of next generation alpha Gallium Oxide-based power devices using mist-CVD technique, DIP – UKM, 2019-2020
  5. Fabrication of carbon nanotubes-graphene composite based thermal interface materials using spin coating for heat removal in microelectronic devices, MI – UKM, 2019
  6. Design and fabrication of smart portable wound healer based on dielectrophoresis technique, TRGS/1/2019/UKM/02/1/1-KPM
  7. December 2019 – November 2022
  8. Fabrication of nano-generator devices based on carbon derivatives on flexible substrates, GUP – UKM, 2018-2019
  9. Improving the quality of directly synthesized single-walled carbon nanotubes (SWNTs) as channel material for spin FET devices, JAIST-MEXT Japan, 2007
  10. Towards a qualitative evaluation of metallic and semiconducting type carbon nanotubes (CNTs) population synthesized by alcohol catalytic chemical vapor deposition (ACCVD) method, JAIST-MEXT Japan, 2008

 

SUPERVISION (ONGOING)

Dr. Raihana Bahru, Post-Doctoral Researcher

  1. Siti Shafura A. Karim (PhD), Main SV
  2. Muhamad Azuddin Hasan (PhD), Co SV
  3. Syed Jamal Ahmed Kazmi (PhD), Main SV
  4. Mohd Shukri Sirat (PhD), Main SV
  5. Elyani Abu Bakar (PhD), Main SV
  6. Faizatul Farah Hatta (PhD), Main SV
  7. Nur Nasyifa Mohd Maidin (PhD), Main SV
  8. Abhay Kumar Mondal (PhD), Main SV
  9. Ummi Kalsom Nordin (PhD), Main SV
  10. Lokesh Srinath (MSc), Co SV
  11. Loh Kean Ping (MSc), Co SV

 

SUPERVISION (COMPLETED)

  1. Edhuan Ismail, IIUM (PhD), 2019
  2. Fatin Bazilah Fauzi, IIUM (PhD), 2020
  3. Siti Zaleha Mat Diah (PhD), 2020
  4. Haslinawati Mohd Mustapha (PhD), 2019
  5. Salmah Karman (PhD), 2017
  6. Aishah Khalid (MSc), 2017
  7. Mohd Amir Zulkefli (MSc), 2017
  8. Mohd Farhanulhakim Mohd Razip Wee (PhD), 2018
  9. Hafzaliza Erny Zainal Abidin (PhD), 2018
  10. Elyani Abu Bakar (MSc), 2018
  11. Lee Li Theng (MSc), 2018
  12. Mohd Ihsan Che Mohd Noh (MSc), 2018
  13. Farah Dzilhani Zulkefli (MSc), 2019
  14. Nabihah Sihar (MSc), 2020
  15. Muhammad Hilmi Johari (MSc), 2020
  16. Ng Kok Eng (MSc), 2020
  17. Nurul Nabila Rosman (MSc), 2020

 

ALUMNI DESTINATION

  1. Universiti Malaya
  2. Kyushu University
  3. National Institute of Materials Science, NIMS Japan
  4. Universiti Kebangsaan Malaysia
  5. Politeknik Port Dickson
  6. Fujitsu, Japan
  7. Miresco Integrated

 

BOOK CHAPTERS

  1. HEZ Abidin, AA Hamzah, J Yunas, Mohd Ambri Mohamed, BY Majlis, Interdigitated MEMS Supercapacitor for Powering Heart Pacemaker 2016; Supercapacitor Design and Applications Ch. 8 (4), (Intech open Book)
  2. M Ghasemi, PK Choudhury, MA Baqir, ARM Zain, Mohd Ambri Mohamed, On the frequency-selective features of gold nanorods-based columnar thin film metamaterial absorber 2016; Nanostructured Thin Films IX 9929, 992908 (Elsevier Book)
  3. Nurul Nabila Rosman, Rozan Mohamad Yunus, Lorna Jeffery Minggu, Khuzaimah Arifin, Mohammad Kassim, Mohd Ambri Mohamed, Direct chemical vapour deposition growth of molybdenum disulfide film on silicon dioxide/silicon substrate 2018, Progress in Photoelectrochemical Research 10-18
  4. Mohd Ambri Mohamed, Transistor berasaskan nanoriben grafin 2018, 27 – 34 (UKM Press)

 

SELECTED JOURNAL PUBLICATIONS

  1. Jamal Kazmi, PC Ooi, BT Goh, MK Lee, M.F. Mohd Razip Wee, Siti Shafura A Karim, SR Ali Raza and Mohd Ambri Mohamed, Bi doping improved magnetic properties of Zinc Oxide nanowires, accepted, RSC Advances 2020
  2. Manas R. Samantaray, Abhay Kumar Mondal, G. Murugados, Sudhagar Pitchaimuth, Santanu Das, Raihana Bahru and Mohd Ambr Mohamed , Synergetic Effects of Hybrid Carbon Nanostructured Counter Electrodes for Dye-Sensitized Solar Cells: A Review, accepted, Materials 2020
  3. Muhammad Hilmi Johari, MS Sirat, Mohd Ambri Mohamed, SNF Mohd Nasir, MA Mohd Teradi AR Mohmad, Effects of Mo vapor concentration on the morphology of vertically standing MoS 2020, Nanotechnology 31, 305710, (IOP, IF: 3.399)
  4. KE Ng and Mohd Ambri Mohamed et al., Performance of all-solution-processed, durable 2D MoS2 flakes− BaTiO3 nanoparticles in polyvinylidene fluoride matrix nanogenerator devices using N-methyl-2-pyrrolidone polar solvent, Journal of Alloys and Compounds 2020; 820-153160 (Elsevier, WoS IF: 4.175
  5. Shafura A Karim and Mohd Ambri Mohamed et al., Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth, Materials 2020; 13 (5), 1136 (MDPI, WoS IF: 2.972)
  6. FB Fauzi, E Ismail, SNSA Bakar, AF Ismail, MA Mohamed et , The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition, Physical Chemistry Chemical Physics 2020; 22 (6), 3481-3489 (Royal Society of Chemistry, WoS IF: 3.567)
  7. R Bahru, MFMA Zamri, Mohd Ambri Mohamed, Structural analyses of polyaniline–titanium oxide composite for acetone detection, Journal of Materials Science: Materials in Electronics 2020; 31 (2), 1574-1584 (Springer, WoS IF: 2.195)
  8. R Bahru, N Shaari, Mohd Ambri Mohamed, Allotrope carbon materials in thermal interface materials and fuel cell applications: A review, International Journal of Energy Research (2020); 44(4), 2471-2498 (Wiley, WoS IF: 3.343)
  9. MM Jaafar, PC Ooi, MFMR Wee, MASM Haniff, Mohd Ambri Mohamed, EY Chang, Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers, Journal of Materials Science: Materials in Electronics 2019; 30 (17), 16415-16420 (Springer, WoS IF: 2.195)
  10. R Bahru, Mohd Ambri Mohamed, Structural analyses and deposition of purified carbon nanotubes using electrophoretic deposition, Materials Research Express 2019; 6 (9), 095054(IOP, WoS IF: 1.449
  11. PS Menon, FA Said, GS Mei, Mohd Ambri Mohamed et al., High Sensitivity Au-based Kretschmann Surface Plasmon Resonance Sensor for Urea Detection, Sains Malaysiana 2019 48 (6), 1179-1185 UKM, WoS IF: 0.540
  12. PC Ooi, MASM Haniff, MFMR Wee, BT Goh, CF Dee, Mohd Ambri Mohamed, Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer 2019; Scientific reports 9 (1), 1-8 (Nature Research, WoS IF: 4.122)
  13. HM Mustapha, MFMR Wee, Ahmad Rifqi Md Zain, Mohd Ambri Mohamed, Characterization of Graphene based Capacitive Microphone 2019; Sains Malaysiana 48 (6), 1201-1207 (UKM, WoS IF: 0.540)
  14. Siti Shafura A Karim, CF Dee, BY Majlis, Mohd Ambri Mohamed, Recent progress on fabrication of zinc oxide nanorod-based field effect transistor biosensors 2019; Sains Malaysiana 48 (6), 1301-1310 (UKM, WoS IF: 0.540)
  15. E Ismail, FB Fauzi, Mohd Ambri Mohamed et al., Kinetic studies of few-layer graphene grown by flame deposition from the perspective of gas composition and temperature 2019; RSC advances 9 (36), 21000-21008 (Royal Society Chemistry, WoS IF: 3.049)
  16. N Sihar, TY Tiong, CF Dee, PC Ooi, AA Hamzah, Mohd Ambri Mohamed, BY Majlis, Ultraviolet light-assisted copper oxide nanowires hydrogen gas sensor 2018; Nanoscale research letters, 13 (1), 1-65 (Springer, WoS IF: 3.159)
  17. EA Bakar, Mohd Ambri Mohamed, PC Ooi, MFMR Wee, CF Dee, BY Majlis, Fabrication of indium-tin-oxide free, all-solution-processed flexible nanogenerator device using nanocomposite of barium titanate and graphene quantum dots in polyvinylidene 2018; Organic Electronics 61, 289-295 (Elsevier, WoS IF: 3.495)
  18. LT Lee, Mohd Ambri Mohamed, I Yahya, J Kulothungan, M Muruganathan, Comparison of piezoelectric energy harvesting performance using silicon and graphene cantilever beam 2018; Microsystem Technologies 24 (9), 3783-3789 (Springer, WoS IF: 1.513)
  19. FB Fauzi, E Ismail, MH Ani, SNSA Bakar, Mohd Ambri Mohamed, BY Majlis , A critical review of the effects of fluid dynamics on graphene growth in atmospheric pressure chemical vapor deposition 2018; Journal of Materials Research 33 (9), 1088-1108 (Materials Research Society, WoS IF: 1.982)
  20. MH Ani, MA Kamarudin, AH Ramlan, E Ismail, MS Sirat, Mohd Ambri Mohamed, A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene 2018; Journal of Materials Science 53 (10), 7095-7111 (Springer, WoS IF: 3.442
  21. MA Zulkefli, Mohd Ambri Mohamed, KS Slow, B YeopMajlis, Nanoelectromechanical Switch Devices Based on Graphene and Carbon Nanotube (CNT) 2018; Sains Malaysiana 47 (3), 619-633 (UKM, WoS IF: 0.540)
  22. MA Zulkefli, Mohd Ambri Mohamed, KIM SSiow, BY Majlis, Peranti Suis Nanoelektromekanikal (NEM) Berunsurkan Grafin dan Tiub Nano Karbon (CNT) 2018; Sains Malaysiana 47 (3), 619-633 (UKM, WoS IF: 0.540)
  23. MA Zulkefli, Mohd Ambri Mohamed, KS Siow, BY Majlis, J Kulothungan, Stress analysis of perforated graphene nano-electro-mechanical (NEM) contact switches by 3D finite element simulation 2018; Microsystem Technologies 24 (2), 1179-1187 (Springer, WoS IF: 1.513)
  24. Ooi, MASM Haniff, MFMR Wee, CF Dee, BT Goh, Mohd Ambri Mohamed, Reduced graphene oxide preparation and its applications in solution-processed write once-read-many-times graphene-based memory device 2017; Carbon 124, 547-554 (Elsevier, WoS IF: 7.466)
  25. MA Zulkefli, Mohd Ambri Mohamed, KS Siow, B Yeop Majlis, J Kulothungan, Three-dimensional finite element method simulation of perforated graphene Nano-Electro-Mechanical (NEM) switches 2017; Micromachines 8 (8), 236 (MDPI, WoS IF: 2.426)
  26. Mohd Ambri Mohamed, FD Zulkefli, BY Majlis, Characterization of Single-Walled Carbon Nanotube Transistors by Direct GrowthMethod 2017; Sains Malaysiana 46 (7), 1141-1145 (UKM, WoS IF: 0.540)
  27. A Khalid, Mohd Ambri Mohamed, AA Umar, Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition 2017, Sains Malaysiana 46 (7), 1111-11174 (UKM, WoS IF: 0.540)
  28. Mohd Ambri Mohamed, FD Zulkefli, BY Majlis Pencirian transistor karbon tiub nano berdinding tunggal yang dihasilkan melalui kaedah pertumbuhan langsung 2017; Sains Malaysiana 46 (7), 1141-1145 (UKM, WoS IF: 0.540)
  29. M Ghasemi, PK Choudhury, MA Baqir, Mohd Ambri Mohamed, ARM Zain,  Metamaterial absorber comprising chromium–gold nanorods-based columnar thin Films 2017; Journal of Nanophotonics 11 (4), 043505 (SPIE, WoS IF: 1.42)
  30. JMA Azam, NN Zulkapli, N Dorah, R Seman, MH Ani, MS Sirat, Mohd Ambri Mohamed et al., Review—critical considerations of high quality graphene synthesized by plasma enhanced chemical vapor deposition for electronic and energy storage devices 2017; ECS Solid State Sci. Technol 6 (6), M3035-M3048 (IOP, WoS IF: 1.795)
  31. HA Lutpi, H Anuar, Mohd Ambri Mohamed, SM Salit, Potential of irradiated high-density polyethylene/ethylene propylene rubber-carbon nanotube nanocomposite as shoe sole 2016, Proceedings of the Institution of Mechanical Engineers, Part P: Journal of Sports Engineering and Technology 230 (2), 100-110 (SAGE, WoS IF: 0.885)
  32. FB Fauzi, R Othman, Mohd Ambri Mohamed, SH Herman, AZA Azhar, MH Ani, Transition Metal Oxide (TMO) thin film memristor on Cu substrate using dilute electrodeposition method 2015, Materials Transactions 56 (8), 1302-1306 (Japan Inst. of Metals and Materials, WoS IF: 0.764)
  33. Nobuo Otsuka, Mohd Ambri Mohamed, Mechanism of Large Thermal Fluctuations and Slow Relaxation of Elastically Interacting Point-Defect System 2015, J. Phys. Soc. Jpn. 84 (7), 074005 (Japan Physical Society, WoS IF: 1.485)
  34. Mohd Ambri Mohamed, PT Lam, N Otsuka, Origin of cooperative transition of antisite-Arsenic defects in Be-doped low temperature-grown GaAs layers 2013, Journal of crystal growth 378, 329-332 (Elsevier, WoS IF: 1.573)
  35. Mohd Ambri Mohamed, P Tien Lam, N Otsuka, Transition of electron transport process in Be-doped low-temperature-grown GaAs 2013, Journal of Applied Physics 114 (8), 083716 (AIP, IF WoF:2.328)
  36. Mohd Ambri Mohamed, P Tien Lam, N Otsuka, Non-equilibrium critical point in Be-doped low-temperature-grown GaAs 2013, Journal of Applied Physics 113 (5), 053504 (AIP, IF WoF:2.328)
  37. M Ambri Mohamed, P Tien Lam, KW Bae, N Otsuka, Cooperative transition of electronic states of antisite As defects in Be-doped low temperature-grown GaAs layers 2011, Journal of Applied Physics 110 (12), 123716 (AIP, IF WoF:2.328)
  38. KW Bae, MA Mohamed, DW Jung, N Otsuka, Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers 2011, Journal of Applied Physics 109 (7), 073918 (AIP, IF WoF:2.328
  39. Mohd Ambri Mohamed, MA Azam, E Shikoh, A Fujiwara, Fabrication and characterization of carbon nanotube field-effect transistors using ferromagnetic electrodes with different coercivities 2010, Japanese Journal of Applied Physics 49 (2S), 02BD08 6 2010 (IOP, IF WoF:1.471
  40. MA Azam, Mohd Ambri Mohamed, E Shikoh, A Fujiwara, Thermal degradation of single-walled carbon nanotubes during alcohol catalytic chemical vapor deposition process 2010, Japanese Journal of Applied Physics 49 (2S), 02BA04 30 2010 (IOP, IF WoF:1.471)
  41. Mohd Ambri Mohamed, N Inami, E Shikoh, Y Yamamoto, H Hori, A Fujiwara, Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes 2008, Science and Technology of Advanced Materials 9 (2), 025019 (Taylor & Francis, IF WoF:3.585)
  42. N Inami, Mohd Ambri Mohamed, E Shikoh, A Fujiwara, Device characteristics of carbon nanotube transistor fabricated by direct growth method 2008, Applied Physics Letters 92 (24), 243115 (AIP, IF WoF:3.521)
  43. N Inami, Mohd Ambri Mohamed, E Shikoh, A Fujiwara, Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method 2007, Science and Technology of Advanced Materials 8 (4), 292 (Taylor & Francis, IF WoF:3.585)

 

CONFERENCE PUBLICATIONS

  1. Mohd Ambri Mohamed, B. Y. Majlis and M. H. Ani: “Electronic state transition in cooperatively interacting point-defects in semiconductor crystals” (Oral Presentation), The 11th IEEE International Conference on Semiconductor Electronics (IEEE-ICSE 2014), Kuala Lumpur, Malaysia.
  2. A. H. Muhamad Ali, M. H. Ani and Mohd Ambri Mohamed: “Channel length effect on the saturation current and the threshold voltages of CNTFET” (Oral Presentation), The 11th IEEE International Conference on Semiconductor Electronics (IEEE-ICSE 2014), Kuala Lumpur, Malaysia.
  3. Mohd Ambri Mohamed, Pham Tien Lam, and Nobuo Otsuka: “Magnetic and electronic properties of Be-doped low-temperature grown GaAs layers”, (Oral Presentation), The 2012 IEEE International Conference on Electronic Devices, Systems and Applications, ICEDSA 2012, FKE, UiTM (2012), Kuala Lumpur, Malaysia.
  4. Mohd Ambri Mohamed, Pham Tien Lam and N. Otsuka: “Cooperative transition of antisite As defects in Be-doped low-temperature-grown GaAs”, (Oral Presentation), The 17th International Conference on Molecular Beam Epitaxy (2012), Nara, Japan.
  5. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “Bistability and macroscopic fluctuation in magnetization of Be-doped low temperature grown GaAs layers”, (Oral Presentation), 2012 Autumn Meeting, The Physical Society of Japan (2012), Yokohama National University, Japan.
  6. Nguyen Tien Cuong, Mohd Ambri Mohamed, Nobuo Otsuka and Dam Hieu Chi: “Reconstruction of interface between carbon nanotubes and ferromagnetic Co electrodes”, (Oral Presentation), 2012 International Conference on Nanomaterials and Electronics Engineering (2012), Kuala Lumpur, Malaysia.
  7. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs”, (Oral Presentation), The 67th Annual Meeting of The Physical Society of Japan (2012), Kansai Gakuin University, Japan.
  8. Mohd Ambri Mohamed, K. W. Bae, P.T. Lam and N. Otsuka: “Electronic state transition of Be-doped low-temperature grown GaAs layers”, (Oral Presentation), The 59th Spring Meeting of Japan Society of Applied Physics (2012), Waseda University, Japan.
  9. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “High-spin and low-spin state transition in Be-doped low temperature grown GaAs”, (Oral Presentation), The 72nd Autumn Meeting of Japan Society of Applied Physics (2011), Yamagata University, Japan.
  10. Mohd Ambri Mohamed, K. W. Bae, D.W Jung, N. Otsuka: “Exchange interaction of localized spins in Be-doped low temperature grown GaAs”, (Oral Presentation), The 58th Spring Meeting of Japan Society of Applied Physics (2011), Kanagawa Institute of Technology, Japan.
  11. Mohd Asyadi Azam, A. Fujiwara, Mohd Ambri Mohamed, E. Shikoh, T. Shimoda: “Direct Growth of Single Walled Carbon Nanotubes on Metal Substrates using Alcohol Catalytic CVD Technique and its Application to Electrochemical Capacitor” (Oral Presentation), The 61st Annual Meeting of the International Society of Electrochemistry (2010), Nice, France.
  12. Mohd Asyadi Azam, Mohd Ambri Mohamed, E. Shikoh, A. Fujiwara and T. Shimoda: “Controlling the growth of vertically aligned single walled carbon nanotubes from ethanol for electrochemical supercapacitor application” (Oral Presentation), The 8th International Symposium on New Materials and Nano-Materials for Electrochemical Systems (2010), Shanghai, China.
  13. Mohd Ambri Mohamed, M. A. Azam, H. Kawabuchi, E. Shikoh and A. Fujiwara: “Characterization of carbon nanotube field-effect transistor fabricated by direct growth method”, (Oral Presentation), The 2nd International Conference on Engineering and ICT (ICEI 2010), Melaka, Malaysia.
  14. Mohd Asyadi Azam, Mohd Ambri Mohamed E. Shikoh and A. Fujiwara: “Controlling the growth of single-walled carbon nanotubes using alcohol catalytic CVD method”, (Oral Presentation), The 2nd International Conference on Engineering and ICT (ICEI 2010), Melaka, Malaysia.
  15. Mohd Ambri Mohamed, Mohd Asyadi Azam, Eiji Shikoh and Akihiko Fujiwara: “Towards realization of carbon nanotube spintronics devices fabricated by a direct growth method”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  16. H. Kawabuchi, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Modulation of carrier injection barriers in carbon nanotube field-effect transistor”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  17. M. A. Azam, Mohd Ambri Mohamed, H. A. Shih, Eiji Shikoh and Akihiko Fujiwara: “Raman spectra analysis for growth time dependence of single-walled carbon nanotubes from Co catalyst”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  18. H.Kawabuchi, Mohd Ambri Mohamed, E. Shikoh and A. Fujiwara: “Bias and gate voltage effects on carbon nanotube transistor fabricated by direct growth method”, (Oral presentation), The 56th Spring Meeting of Japan Society of Applied Physics (2009), Tsukuba University, Japan.
  19. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Magnetoresistance effect of FET device using direct synthesis of SWNTs from ferromagnetic electrodes”, (Oral Presentation), The 55th Spring Meeting of Japan Society of Applied Physics (2008), Nihon University, Japan.
  20. N. Inami, Mohd Ambri Mohamed, E. Shikoh and A. Fujiwara: “Device characteristics of carbon nanotube transistor fabricated by direct growth method”, (Oral presentation), The 55th Spring Meeting of Japan Society of Applied Physics (2008), Nihon University, Japan
  21. Mohd Ambri Mohamed, N. Inami, E. Shikoh, Y. Yamamoto, H. Hori and A. Fujiwara: “Direct synthesis of Single-walled Carbon Nano Tubes on Substrates for Spin Electronics Devices”, (Oral Presentation), The Malaysia-Japan International Symposium on Advanced Technology (MJISAT 2007), Kuala Lumpur, Malaysia.
  22. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Spintronics device using direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes”, (Oral presentation), The 68th Autumn Meeting of Japan Society of Applied Physics (2007), Hokkaido Institute of Technology, Japan.
  23. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Effect of Ar/H2 pretreatment at SWNTs growth by alcohol CCVD method”, (Poster Presentation), The 5th JAIST International Symposium on Nano Technology (NT 2006), Ishikawa, Japan.
  24. Nobuhito Inami, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Synthesis condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method”, (Poster Presentation), The 6th JAIST International Symposium on Nano Technology (NT 2006), Ishikawa, Japan.