Dr. Mohd Ambri Mohamed

staff Ambri1

Research Fellow/Senior Lecturer

Email: ambri@ukm.edu.my
Phone. 03-89118157

 

EDUCATION

Ph.D., Materials Science, Japan Advanced Institute of Science and Technology, March 2010
M.Sc., Materials Science, Japan Advanced Institute of Science and Technology, March 2007
B.Eng., Materials Engineering, Tokyo University of Science, March 2004

 

WORK EXPERIENCES

Assistant Professor, Faculty of Engineering, Materials Engineering Department, International Islamic University Malaysia, Apr 2013-Jan 2014.
Assistant Professor, School of Materials Science, Japan Advanced Institute of Science and Technology, May 2010-March 2013.
Postdoc Researcher, Center for Nano Materials and Technology, JAIST, Apr 2010.
Production Engineer, Alps Electric (M) Sdn. Bhd. Apr 2004-March 2005.

 

RESEARCH KEYWORDS

Carbon electronics, III-V Semiconductors, MBE technology, Spintronics

 

MEMBERSHIPS

Member of The Japan Society of Applied Physics
Member of The Physical Society of Japan
Member, Electron Devices Chapter, IEEE Malaysia Section

 

TEACHING COURSES

Z1RR 6032 Applied Nanoelectronics (PG), UKM
M411 Methods of Instrumental Analysis (PG), JAIST, Japan
MME 4215 Semiconductor Materials and Processing (UG), IIUM
MME 2207 Solid State Physics and Crystallography (UG), IIUM
MME 2503 Materials Science and Engineering (UG), IIUM

 

RESEARCH PROJECTS

Exploration of a new possibility of crystal growth containing high concentration of unpaired sp electrons for the application of magnetic semiconductor.
Carbon-based Nano electro-mechanical systems (NEMS) Sensors and Devices.
Fundamental study of MEMS in artificial kidney.

 

RESEARCH GRANTS

Control of carrier injection barriers in carbon nanotube field-effect transistor, RM 40 000, GGPM-2014-032, Aug 2014 – Jul 2016. (Principal Researcher)
Growth of catalyst-free graphene by plasma-assisted CVD method for biomedical devices, RM 121 000, FRGS/1/2014/SG06/UKM/02/1, July 2014 – June 2016. (Principal Researcher)
Development of Hybrid Nano-Micro Electromechanical System (Nano-MEMS) device, RM 25 000, DPP-2014-049, Apr 2014-March 2015. (Co-researcher)
Fabrication of High-Performance Carbon Nanotube Field-Effect Transistor by Alcohol Catalytic Vapor Deposition Method, RM 40 000, RAGS 13-002-0065, Sept 2013- Oct 2015. (Co-researcher)
Development of a Photo-voltaic System Using CNT and ZnxCd1-x(O) for the Conversion of Solar Energy to Electricity, RM 74 000, FRGS 13, Nov 2013-Oct 2015. (Co-researcher)
Exploration of a new possibility of crystal growth containing high concentration of unpaired sp electrons for the application of magnetic semiconductor, 3,000,000 yen, JAIST – MEXT Japan, Apr 2010 – March 2013 (Co-researcher)
Improving the quality of directly synthesized single-walled carbon nanotubes (SWNTs) as channel material for spin FET devices, 1,000,000 yen, JAIST-MEXT Japan, 2007. (Principal Reasearcher)
Towards a qualitative evaluation of metallic and semiconducting type carbon nanotubes (CNTs) population synthesized by alcohol catalytic chemical vapor deposition (ACCVD) method, 1,000,000 yen, JAIST-MEXT Japan, 2008 (Principal Researcher)

 

SELECTED JOURNAL PUBLICATIONS

  1. Mohd Ambri Mohamed and N. Otsuka: “Transition of electron transport process in Be-doped low-temperature-grown GaAs layer”, J. Appl. Phys., 114, 083716 (2013).
  2. Mohd Ambri Mohamed, Pham Tien Lam, and N. Otsuka: “Non-Equilibrium Critical Point in Be-doped low-temperature-grown GaAs”, J. Appl. Phys.113, 053504 (2013).
  3. Mohd Ambri Mohamed, Pham Tien Lam, and N. otsuka: “Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers”, Journal of Crystal Growth, 378, 329-332 (2013).
  4. Nguyen Tien Cuong, Mohd Ambri Mohamed, Nobuo Otsuka and Dam Hieu Chi:
    “Reconstruction and Electronic Properties of Interface between Carbon Nanotubes and Ferromagnetic Co electrodes”, Appl. Mech. Mater., Vol. 229-231, pp 183-187 (2012)
  5. Mohd Ambri Mohamed, Pham Tien Lam, K. W. Bae and N. otsuka: “Cooperative transition of antisite As defects in Be-doped low temperature grown GaAs layers”, J. Appl. Phys. 110, 123716 (2011)
  6. K. W Bae, Mohd Ambri Mohamed, D.W Jung and N. otsuka: “Direct exchange interaction of localized spins associated with upaired sp electrons in Be-doped low temperature grown GaAs”, J. Appl. Phys. 109/6 073918 (2011)
  7. Mohd Ambri Mohamed, Mohd Asyadi Azam, Eiji Shikoh and Akihiko Fujiwara: “Fabrication and Characterization of Carbon Nanotube Field-Effect Transistors using Ferromagnetic Electrodes with Different Coercivities”, Jpn. J. Appl. Phys. 49 02BD08 (2010)
  8. Mohd Asyadi Azam, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Thermal degradation of single-walled carbon nanotubes during alcohol catalytic CVD process”, Jpn. J. Appl. Phys. 49 02BA04 (2010)
  9. Nobuhito Inami, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Device characteristics of carbon nanotube transistor fabricated by direct growth method”, Appl. Phys. Lett. 92 243115 (2008)
  10. Mohd Ambri Mohamed, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori and Akihiko Fujiwara: “Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes”, Sci. Technol. Adv. Mater. 9 02519 (2008)
  11. Nobuhito Inami, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Synthesis condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method”, Sci. Technol. Adv. Mater. 8 292-295 (2007)

CONFERENCE PUBLICATIONS

  1. Mohd Ambri Mohamed, B. Y. Majlis and M. H. Ani: “Electronic state transition in cooperatively interacting point-defects in semiconductor crystals” (Oral Presentation), The 11th IEEE International Conference on Semiconductor Electronics (IEEE-ICSE 2014), Kuala Lumpur, Malaysia.
  2. A. H. Muhamad Ali, M. H. Ani and Mohd Ambri Mohamed: “Channel length effect on the saturation current and the threshold voltages of CNTFET” (Oral Presentation), The 11th IEEE International Conference on Semiconductor Electronics (IEEE-ICSE 2014), Kuala Lumpur, Malaysia.
  3. Mohd Ambri Mohamed, Pham Tien Lam, and Nobuo Otsuka: “Magnetic and electronic properties of Be-doped low-temperature grown GaAs layers”, (Oral Presentation), The 2012 IEEE International Conference on Electronic Devices, Systems and Applications, ICEDSA 2012, FKE, UiTM (2012), Kuala Lumpur, Malaysia.
  4. Mohd Ambri Mohamed, Pham Tien Lam and N. Otsuka: “Cooperative transition of antisite As defects in Be-doped low-temperature-grown GaAs”, (Oral Presentation), The 17th International Conference on Molecular Beam Epitaxy (2012), Nara, Japan.
  5. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “Bistability and macroscopic fluctuation in magnetization of Be-doped low temperature grown GaAs layers”, (Oral Presentation), 2012 Autumn Meeting, The Physical Society of Japan (2012), Yokohama National University, Japan.
  6. Nguyen Tien Cuong, Mohd Ambri Mohamed, Nobuo Otsuka and Dam Hieu Chi: “Reconstruction of interface between carbon nanotubes and ferromagnetic Co electrodes”, (Oral Presentation), 2012 International Conference on Nanomaterials and Electronics Engineering (2012), Kuala Lumpur, Malaysia.
  7. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs”, (Oral Presentation), The 67th Annual Meeting of The Physical Society of Japan (2012), Kansai Gakuin University, Japan.
  8. Mohd Ambri Mohamed, K. W. Bae, P.T. Lam and N. Otsuka: “Electronic state transition of Be-doped low-temperature grown GaAs layers”, (Oral Presentation), The 59th Spring Meeting of Japan Society of Applied Physics (2012), Waseda University, Japan.
  9. Mohd Ambri Mohamed, P.T Lam, K. W. Bae and N. Otsuka: “High-spin and low-spin state transition in Be-doped low temperature grown GaAs”, (Oral Presentation), The 72nd Autumn Meeting of Japan Society of Applied Physics (2011), Yamagata University, Japan.
  10. Mohd Ambri Mohamed, K. W. Bae, D.W Jung, N. Otsuka: “Exchange interaction of localized spins in Be-doped low temperature grown GaAs”, (Oral Presentation), The 58th Spring Meeting of Japan Society of Applied Physics (2011), Kanagawa Institute of Technology, Japan.
  11. Mohd Asyadi Azam, A. Fujiwara, Mohd Ambri Mohamed, E. Shikoh, T. Shimoda: “Direct Growth of Single Walled Carbon Nanotubes on Metal Substrates using Alcohol Catalytic CVD Technique and its Application to Electrochemical Capacitor” (Oral Presentation), The 61st Annual Meeting of the International Society of Electrochemistry (2010), Nice, France.
  12. Mohd Asyadi Azam, Mohd Ambri Mohamed, E. Shikoh, A. Fujiwara and T. Shimoda: “Controlling the growth of vertically aligned single walled carbon nanotubes from ethanol for electrochemical supercapacitor application” (Oral Presentation), The 8th International Symposium on New Materials and Nano-Materials for Electrochemical Systems (2010), Shanghai, China.
  13. Mohd Ambri Mohamed, M. A. Azam, H. Kawabuchi, E. Shikoh and A. Fujiwara: “Characterization of carbon nanotube field-effect transistor fabricated by direct growth method”, (Oral Presentation), The 2nd International Conference on Engineering and ICT (ICEI 2010), Melaka, Malaysia.
  14. Mohd Asyadi Azam, Mohd Ambri Mohamed E. Shikoh and A. Fujiwara: “Controlling the growth of single-walled carbon nanotubes using alcohol catalytic CVD method”, (Oral Presentation), The 2nd International Conference on Engineering and ICT (ICEI 2010), Melaka, Malaysia.
  15. Mohd Ambri Mohamed, Mohd Asyadi Azam, Eiji Shikoh and Akihiko Fujiwara: “Towards realization of carbon nanotube spintronics devices fabricated by a direct growth method”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  16. H. Kawabuchi, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Modulation of carrier injection barriers in carbon nanotube field-effect transistor”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  17. M. A. Azam, Mohd Ambri Mohamed, H. A. Shih, Eiji Shikoh and Akihiko Fujiwara: “Raman spectra analysis for growth time dependence of single-walled carbon nanotubes from Co catalyst”, (Poster Presentation), The International Symposium on Carbon Nanotube Nanoelectronics (CNTNE 2009), Matsushima, Japan.
  18. H.Kawabuchi, Mohd Ambri Mohamed, E. Shikoh and A. Fujiwara: “Bias and gate voltage effects on carbon nanotube transistor fabricated by direct growth method”, (Oral presentation), The 56th Spring Meeting of Japan Society of Applied Physics (2009), Tsukuba University, Japan.
  19. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Magnetoresistance effect of FET device using direct synthesis of SWNTs from ferromagnetic electrodes”, (Oral Presentation), The 55th Spring Meeting of Japan Society of Applied Physics (2008), Nihon University, Japan.
  20. N. Inami, Mohd Ambri Mohamed, E. Shikoh and A. Fujiwara: “Device characteristics of carbon nanotube transistor fabricated by direct growth method”, (Oral presentation), The 55th Spring Meeting of Japan Society of Applied Physics (2008), Nihon University, Japan
  21. Mohd Ambri Mohamed, N. Inami, E. Shikoh, Y. Yamamoto, H. Hori and A. Fujiwara: “Direct synthesis of Single-walled Carbon Nano Tubes on Substrates for Spin Electronics Devices”, (Oral Presentation), The Malaysia-Japan International Symposium on Advanced Technology (MJISAT 2007), Kuala Lumpur, Malaysia.
  22. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Spintronics device using direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes”, (Oral presentation), The 68th Autumn Meeting of Japan Society of Applied Physics (2007), Hokkaido Institute of Technology, Japan.
  23. Mohd Ambri Mohamed, N. Inami, E. Shikoh, and A. Fujiwara: “Effect of Ar/H2 pretreatment at SWNTs growth by alcohol CCVD method”, (Poster Presentation), The 5th JAIST International Symposium on Nano Technology (NT 2006), Ishikawa, Japan.
  24. Nobuhito Inami, Mohd Ambri Mohamed, Eiji Shikoh and Akihiko Fujiwara: “Synthesis condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method”, (Poster Presentation), The 6th JAIST International Symposium on Nano Technology (NT 2006), Ishikawa, Japan.