Gallium arsenide [GaAs] is a compound of two elements, gallium and arsenic. This semiconductor is used to make devices such as microwave frequency integrated circuits, infrared light emitting diodes, laser diodes and solar cells. GaAs has some electronics properties which are superior to silicon’s. It has a higher saturated velocity and higher electron mobility, allowing it to function at frequencies in excess of 250 GHz. Also, GaAs devices generate less noise than silicon devices when operated at high frequencies. They can also be operated at higher power levels than silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, WLAN, satellite communications, microwave point-to-point links and some radar systems. It is used in the manufacture of Gunn diodes for generation of microwaves.

For this research theme, the group focuses on the development of growth technologies for compound semiconductor materials using molecular beam epitaxy (MBE) and fabrication technologies of high speed devices. Other important activities include investigation of properties and physics of new advanced materials. Collaboration with Telekom Research and Development (TMR&D) in III-V compound semiconductor research has been in progress since 1997. High speed devices such as high electron mobility transistor (HEMT), pseudomorphic HEMT (PHEMT), metamorphic HEMT (MHEMT) and VCSELs are studied especially about the structure of devices and characteristics of epitaxial layers. In advance, tailoring to future needs of green communication technology. Future research studies planned include development of high efficiency PV cells and high speed photodetectors heterostructure materials.

Research Projects

• Epitaxial growth of MHEMT layer using Molecular Beam Epitaxy
• Epitaxial growth of GINA structure for VCSEL