Sains Malaysiana 29:163-170 (2000)                                                                            Sains Fizis dan Gunaan /

Physical and Applied Sciences

 

Optimization of Titanium Silicide Formation on

Boron Doped Silicon Using Statistical Design

 

 

Uda Hashim

MISEM-MIMOS Berhad

Technology Park Malaysia

57000 Kuala Lumpur,Malaysia

 

Abu Hassan Shaari

Department of Economic Statistic

Faculty of Economy

Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor D.E. Malaysia

 

Burhanudin Yeop Majlis & Sahbudin Shaari

UKM-Telekom Microelectronic Research Centre

Faculty of Engineering, Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor D.E. Malaysia

 

 

 

ABSTRACT

 

The effects of first heat treatment temperature, second heat treatment temperature and second heat treatment time on titanium films by measuring the sheet resistance was investigated using statistical design of experiment. Two-level screening experiment with 23 factorial design was used to evaluate three effects in eight combination runs.  The analysis of variance revealed that, the second heat treatment temperature was significant and being the main contributing factors to the final sheet resistance of the titanium silicide. The first heat treatment temperature and the second heat treatment time were found not important.

 

 

ABSTRAK

 

Kesan suhu rawatan haba pertama, suhu rawatan haba kedua dan tempoh rawatan haba kedua ke atas logam titanium dikaji secara ujikaji rekabentuk statistik dengan mengukur nilai rintangan keping.  Ujikaji pengasingan dua-aras dengan rekabentuk faktoran 23 digunakan untuk menilai tiga faktor ujikaji dalam lapan kombinasi rawatan.  Analisis varian menunjukkan bahawa suhu rawatan haba kedua adalah sangat bererti dan penyumbang utama kepada nilai rintangan akhir titanium silikid. Suhu rawatan haba pertama dan tempoh rawatan haba kedua didapati tidak penting.

 

 

RUJUKAN/REFERENCES

 

Maex, K. 1993. Silicides for integrated circuits.  J. Materials Science and Engineering. 53-153.

Montfomery D.C. 1991.  Design and Analysis of Experiments. New York: John Wiley and Sons.

Jones R.E. & Mele T.C. 1991.  Use of Screening and Response Surface Experiment Designs for Development of a 0.5 μm CMOS Self-aligned Titanium Silicide Process.  IEEE Trans. On Electron Devices 4(4): 281-287.

Wilson S.R. & Tracy C.J. 1993.  Handbook of Multilevel Metallization for Integrated Circuits. Materials. Technology and Application. New Jersey: Noyes Publications.

Chow T.P., Katz W., Goehner R. & Smith G. 1985.  Titanium Silicide Formation on Boron-Implanted Silicon.  J. Electrochem. Soc: Solid State Sci.. & Technology  132(8): 1914-1918.

El-Kareh B. 1994. Comparison of RTP and Furnace Processing for Quarter-Micron CMOS. SPIE Proceedings. Vol. 2091.

 

 

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