Sains Malaysiana 48(6)(2019): 1195–1199

http://dx.doi.org/10.17576/jsm-2019-4806-06

 

Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2O3)

(Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2O3))

 

SITI KUDNIE SAHARI1*, NIK AMNI FATHI NIK ZAINI FATHI1, AZRUL AZLAN HAMZAH2, NORSUZAILINA MOHAMED SUTAN1, ZAIDI EMBONG3, SUHANA MOHAMED SULTAN4, MUHAMMAD KASHIF1, MARINI SAWAWI1, LILIK HASANAH5, ROHANA SAPAWI1, KURYATI KIPLI1, ABDUL RAHMAN KRAM1 & NAZREEN JUNAIDI1

 

1Faculty of Engineering, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia

 

2Institute of MicroEngineering and Nanotechnology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

3Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor Darul Takzim, Malaysia

 

4Department of Electronic and Computer Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru, Johor Darul Takzim, Malaysia

 

5Universitas Pendidikan Indonesia, Jl. Dr. Setiabudhi No 229, Bandung, Indonesia

 

Received: 14 August 2018/Accepted: 26 November 2018

 

ABSTRACT

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C.

 

Keywords: Al2O3; germanium; interfacial layer; post deposition anneal

 

ABSTRAK

Pemahaman tentang struktur ikatan kimia yang tinggi dielektrik/antara muka Germania (Ge) adalah sangat penting untuk membentuk antara muka dielektrik/Ge berkualiti baik dalam fabrikasi Ge kesan medan transistor logam oksida semikonduktor (MOSFETs). Di samping itu, masih belum ada penjelasan terperinci mengenai pertumbuhan antara dielektrik/Ge di bawah pengaruh suhu yang berlainan bagi pemanasan pasca sepuh lindap. Penyelidikan kesan suhu pemendapan pasca sepuh lindap (PDA) antara 400°C dan 600°C pada komposisi kimia lapisan antara antara Ge dan Al2O3 diperiksa oleh spektroskopi fotoelektron x-ray (XPS). Dalam makalah ini, kami mengkaji kestabilan terma dan pencirian struktur untuk struktur gerbang Al2O3 dielektrik yang ditanam di Ge oleh percikan RF oleh spektroskopi fotoelektron x-ray (XPS). Difahamkan bahawa rantau kekurangan oksigen dalam lapisan antara muka (IL) ditingkatkan daripada Al2O3 sepenuhnya teroksida dengan suhu PDA yang meningkat. Fenomena yang tidak diingini ini menyebabkan pengecutan IL pada antara muka Ge/Al2O3 pada suhu lebih tinggi 600°C.

 

Kata kunci: Al2O3; Ge; lapisan antara muka; pos pemendapan rawatan haba

REFERENCES

Bai-Qing, X., Hu-Dong, C., Bing, S., Sheng-Kai, W. & Hong- Gang, L. 2012. The impact of HCl precleaning and sulfur passivation on the Al2O3/Ge interface in Ge metal-oxide-semiconductor capacitors. Chinese Physics Letters 29(4): 046801.

Ching, C.C., Hsin, C.C., Chen, W.C., Lu, H.S., Yang, H.C. & Chang, Y.C. 2006. Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates. Journal of The Electrochemical Society 153(7): F160-F168.

Han, J.H., Zhang, R., Osada, T., Hata, M., Takenaka, M. & Takagi, S. 2013. Impact of plasma post-nitridation on HfO2/ Al2O3/SiGe gate stacks toward EOT scaling. Microelectronic Engineering 109: 266-269.

He, G., Zhang, J., Sun, Z., Lv, J., Chen, H. & Liu, M. 2016. Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing. AIP Advances 6: 025003-1-025003-7.

He, G., Liu, M., Zhu, L.Q., Chang, M., Fang, Q. & Zhang, L.D. 2005. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (1 0 0). Surface Science 576: 67-75.

Lucovsky, G., Kim, J.W. & Nordlund, D. 2013. First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates. Microelectron. Eng. 109: 370-373.

Matsui, M., Murakami, H., Fujioka, T., Ohta, A., Higashi, S. & Miyazaki, S. 2011. Characterization of chemical bonding features at metal/GeO2 interfaces by X-ray photoelectron spectroscopy. Microelectron. Eng. 88(7): 1549-1552.

Sahari, S.K., Kashif, M., Mohamed Sutan, N., Embong, Z., Nik Zaini Fathi, N.A.F., Hamzah, A.A., Yeop Majlis, B. & Ahmad, I. 2017a. Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium. Microelectronics International 34(2): 64-68.

Sahari, S.K., Kashif, M., Sawawi, M., Fathi, N.A.F.N.Z., Hamzah, A.A., Majlis, B.Y., Junaidi, N., Sapawi, R., Kipli, K., Mohamed Sutan, Abdul Halim, N.A. & Wan Masra, S.M. 2017b. Stability of chlorine termination on Ge(100) and Ge(111) surfaces. MATEC Web of Conferences 05005: 1-5.

Sahari, S.K., Fathi, N.A.F.N.Z., Sutan, N.M., Sapawi, R., Hamzah, A.A.B. & Majlis, B.Y. 2015. Wet chemical cleaning effect on the formation of ultrathin interfacial layer between germanium (Ge) and high-k dielectric. IEEE Regional Symposium on Micro and Nano Electronics 15664934.

Sahari, S.K., Momamad Sutan, N., Sapawi, R., Yakub, I., Awg Salleh, D.N.S. & Lit, A. 2014. Defects generation in Ge/ GeO2 structure. Key Engineering Materials 594: 1069-1073.

Schmeisser, D., Schnell, R.D., Bogen, A., Himpsel, F.J., Rieger, D., Landgren, G. & Morar, J.F. 1986. Surface oxidation states of germanium. Surf. Sci. 172: 455-465.

Shang, H., Frank, M.M., Gusev, A.P., Chu, J.O., Bedell, S.W., Guarini, K.W. & Leong, M. 2007. Germanium channel MOSFETs: Opportunities and challenges. IBM Journal of Research and Development 50: 377-386.

Shibayama, S., Kato, K., Sakashita, M., Takeuchi, W., Taoka, N., Nakatsuka, O. & Zaima, S. 2014. Thin Solid Films 557: 282-287.

Song, J., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T. & Iwai, H. 2007. Improvement of interfacial properties with interfacial layer in La2O3/Ge structure. Microelectronic Engineering 84: 2336-2339.

Ngai, T., Qi, W.J., Sharma, R., Fretwell, J., Chen, X., Lee, J.C. & Banerjee, S. 2000. Electrical properties of ZrO2 gate dielectric on SiGe. Appl. Phys. Lett. 76: 502-504.

van Elshochta, S., Caymax, M., Conard, T., De Gendt, S., Hoflijk, I., Houssa, M., De Jaeger, B., van Steenbergen, J., Heyns, M. & Meuris, M. 2006. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices. Appl. Phys. Lett. 88: 141904.

Wang, S.Q. & Mayer, J.W. 1988. Reactions of Zr thin films with SiO2 substrates. J. Appl. Phys. 64(9): 4711.

Wallace, R.M., McIntyre, P.C., Kim, J. & Nishi, Y. 2009. Atomic layer deposition of dielectrics on Ge and III-V materials for ultrahigh performance transistor. MRS Bull. 34(7): 493-503.

Wu, D., Lu, J.E., Vainonen-Ahlgren, E., Tois, M., Tuomine, M., Östling, M. & Zhang, S.L. 2005. Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe. Solid-State Electronics 49(2): 193-197.

Zhang, L., Li, H., Guo, Y., Tang, K., Woicik, J., Robertson, J. & McIntyre, P.C. 2015. Selective passivation of GeO2/Ge interface defects in atomic layer deposited High-k MOS structures. Appl. Materials and Interface 7(37): 20499-20506.

Zhang, R., Huang, P.C., Lin, J.C., Teoka, N. & Takenaka, M. 2013. High-mobility Ge p- and n-MOSFETs with 0.7-nm EOT using HfO2/Al2O3/GeOx /Ge gate stacks fabricated by plasma postoxidation. IEEE Transactions on Electron Devices 60: 927-934.

Zhao, J., Yang, L., McLeod, A.J. & Liu, L. 2015. Reduced GeO2 nanoparticles: Electronic structure of a nominal GeOx complex and its stability under H2 annealing. Scientific Reports 5:1-10.

 

*Corresponding author; email: sskudnie@unimas.my

 

 

 

previous