Sains Malaysiana 40(6)(2011): 631–636

Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

(Perbandingan Variasi Diameter Peranti dan Mesa dalam Laser Pemancar Permukaan dengan Rongga Menegak dan Perigi Kuantum Berbilang yang Dilakur Wafer Secara Berganda)

P. S. Menon*, K. Kandiah, B. Y. Majlis & S. Shaari

Institute of Microengineering and Nanoelectronics (IMEN)

Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, D.E., Malaysia

Diserahkan: 25 Januari 2010 / Diterima: 4 Mac 2010

ABSTRACT

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.

Keywords: GaAs; InP; mesa; multi quantum well; semiconductor laser

ABSTRAK

Laser pemancar permukaan dengan rongga menegak untuk jarak gelombang panjang (LW-VCSEL) mempunyai kelebihan yang lebih nyata berbanding laser pemancar sisi konvensional. Kelebihannya termasuklah kebolehan melakukan pemilihan mod, gandingan gentian, arus ambang yang rendah dan pengintegrasian ke dalam jujukan 2D atau sebarang peranti elektronik lain. Momentum pengkomersialannya semakin meningkat di dalam rangkaian tempatan dan capaian apabila sistem komunikasi optik semakin berkembang. Pemodelan berangka LW-VCSEL yang menggunakan perigi kuantum berbilang (MQW) berasaskan substrat InP yang terlakur wafer dan pemantul Bragg teragih (DBR) yang berasaskan substrat GaAs dipersembahkan di dalam kertas ini. Penekanan diberikan terhadap perbandingan parameter reka bentuk diameter dan mesa dan kesannya terhadap pelbagai pencirian peranti.

Kata kunci: GaAs; InP; laser semikonduktor; mesa; perigi kuantum berbilang

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*Pengarang untuk surat-menyurat; email: susi@eng.ukm.my