Sains Malaysiana 42(2)(2013): 231–237

 

Pressure Induced Structural and Electronic Bandgap Properties of Anatase and Rutile TiO2

(Struktur dan Tekanan Ciri Jurang Jalur Elektronik Anatas dan TiO2 Rutil yang dirangsang oleh Tekanan)

 

Tariq Mahmood1,2*, Chuanbao Cao1, Rashid Ahmed3, Maqsood Ahmed2, M. A. Saeed3, Abrar Ahmed Zafar2, Talab Husain2 & M.A. Kamran1

1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing-100081 

P.R. China

 

2Centre for High Energy Physics, University of the Punjab, Lahore-54590, Pakistan

 

3Physics Department, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor

Malaysia

 

Diserahkan: 7 Januari 2012 / Diterima: 21 Mei 2012

 

ABSTRACT

In this study, we present the structural and electronic bandgap properties of anatase and rutile titanium dioxide by applying ultrasoft pseudo-potential plane wave approach developed within the frame of density functional theory (DFT). We used generalized gradient approximation (GGA) proposed by Perdew-Burke-Ernzerhof (PBE) for exchange correlation potential. In our pressure driven investigations, geometry optimization is carried out for different values of pressure over a range of 0-100 GPa and subsequently related structural parameters and bandgap values of anatase and rutile titanium dioxide (TiO2) have been calculated. In both cases, the lattice constants (a, c) and volume decreased as the pressure was increased. Similarly, internal parameter for anatase increased and for rutile TiO2 it decreased under high pressure. The value of c/a decreased for anatase and increased for rutile TiO2 as a function of pressure. Our band structure analysis showed different behavior of bandgap between anatase and rutile TiO2. The conduction band of anatase TiO2 moved opposite to the conduction band of rutile TiO2 as we increase the pressure. Additionally we used the Birch-Murnaghan equation of state to obtain the equilibrium volume (V0), bulk modulus (B0) and pressure derivative of bulk modulus (B0) at zero pressure. The calculated results are in good agreement with previous experimental as well as theoretical results.

 

Keywords: Conduction band; density function theory; pressure

 

ABSTRAK

Di dalam kajian ini, kami membentangkan ciri struktur dan jurang jalur elektronik bagi anatas dan titanium dioksida rutil dengan menggunakan pendekatan gelombang satah pseudo-keupayaan ultralembut yang dibangunkan dalam kerangka teori fungsi ketumpatan (DFT). Kami menggunakan penganggaran ceruk umum (GGA) yang diusulkan oleh Perdew-Burke-Ernzerhof (PBE) untuk keupayaan korelasi pertukaran. Kajian tekanan yang didorong pengoptimuman geometri telah dijalankan untuk nilai tekanan yang berbeza pada julat 0-100 GPa. Parameter struktur dan nilai jurang jalur anatas dan titanium dioksida rutil telah dikira. Dalam kedua-dua kes, nilai pemalar kekisi (a, c) dan isi padu menurun apabila tekanan meningkat. Parameter dalaman untuk anatas meningkat dan untuk TiO2 rutil menurun pada tekanan tinggi. Nilai c/a menurun untuk anatas dan meningkat untuk TiO2 rutil sebagai fungsi tekanan. Analisis struktur jalur menunjukkan tingkah laku yang berbeza antara jurang jalur anatas dan TiO2 rutil. Jalur konduksi anatas TiO2 bergerak dengan berlawanan arah terhadap jalur konduksi TiO2, rutil apabila tekanan meningkat. Persamaan keadaan Birch-Murnaghan telah digunakan untuk mendapatkan isi padu keseimbangan (V0) modulus pukal (B0) dan terbitan tekanan modulus pukal (B0’) pada tekanan sifar. Keputusan yang diperoleh adalah selari dengan keputusan uji kaji dan teori yang sebelumnya.

 

Kata kunci: Jalur konduksi; tekanan; teori fungsi ketumpatan

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*Pengarang untuk surat-menyurat; email: tariq_mahmood78@hotmail.com

 

 

 

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