Sains Malaysiana 43(6)(2014): 819–825

An Analysis of the Electron Trajectory in the Vicinity of GaAs Quantum Dot

(Analisis Lintasan Pergerakan Elektron di Sekitar Titik Kuantum GaAs)

HANAFI ITHNIN¹²*, M. KHALID KASMIN¹, A. RADZI MAT ISA¹, A. SHAARI¹& R. AHMED¹

¹Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor, Malaysia

²Plan Assesment Technology (PAT), Industrial Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor, Malaysia

Diserahkan: 29 Mac 2013/Diterima: 21 Disember 2013

ABSTRACT

Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface.

Keywords: Density functional theory; electron trajectory; GaAs; quantum dot

ABSTRAK

Titik kuantum adalah kelas struktur-nano yang menarik dan dianggap berpotensi sebagai sistem prototip untuk peranti-nano seperti transistor elektron tunggal (SET). Dalam kajian ini kami melaporkan analisis lintasan elektron di sekitar titik kuantum galium arsenida (GaAs). Dalam kajian ini, kaedah DFT digunakan untuk mengoptimumkan struktur titik kuantum dan mengira keupayaan elektrostatik di sekeliling titik kuantum. Di bawah aruhan keupayaan elektrostatik yang didapati, lintasan pergerakan satu elektron menuju ke titik kuantum dikaji. Hasil kajian. menunjukkan bahawa titik kuantum GaAs mempunyai permukaan keupayaan positif dan negatif yang mengaruh interaksi antara elektron dan titik kuantum. Hasil kajian ini memotivasikan pembangunan saluran elektrod SET dengan elektron bergerak menuju ke arah titik kuantum pada permukaan keupayaan positif berbanding permukaan berkeupayaan negatif.

Kata kunci: GaAs; lintasan elektron; teori fungsi ketumpatan; titik kuantum

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*Pengarang untuk surat-menyurat; email:  hanafizik@gmail.com