Institute of Microengineering and Nanoelectronics

 Institute of Microengineering and Nanoelectronics

Dr. Muhammad Aniq Shazni Mohammad Haniff

Research Fellow / Senior Lecturer
Phone: +603-89118560
E-mail: aniqshazni@ukm.edu.my / a_niq@hotmail.com

 

Education:
2016 Ph.D. (Mechanical Engineering), Universiti Sains Malaysia, Malaysia
2011 B.Eng. (Mechanical Engineering), Universiti Teknologi Mara, Malaysia

 

Research Interest:
Nanomaterials, compound semiconductors, nanofabrication, strain-pressure sensor and gas sensor.

 

Research Experiences:
2015 – 2019 Senior researcher, Advanced Devices Lab, MIMOS Berhad
2012 – 2015 Research assistant, Nanoelectronics Lab, MIMOS Berhad

 

Memberships:
Member, Board of Engineers Malaysia (BEM)
Member, Institute of Electrical and Electronics Engineers (IEEE)
Member, Malaysia Nanotechnology Association (MNA)

Reviewer for ACS Applied Materials & Interfaces (American Chemical Society), Carbon (Elsevier), Nanotechnology (IOPscience) and Journal of Materials Science (Springer)

 

Selected Publication:

  1. Ooi, PC; Haniff, M.A.S.M.; Wee, M.F.M.R.; Goh, B.T.; Dee, C.F.; Mohamed, M.A.; Majlis, B.Y. Electrical Transportation Mechanisms of Molybdenum Disulfide Flakes-Graphene Quantum Dots Heterostructure Embedded in Polyvinylidene Flouride Polymer. Sci. Rep. 9(1) (2019) 6761. (WoS-Q1)
  2. Haniff, M.A.S.M.; Ariffin, N.H.Z.; Hafiz, S.M.; Ooi, P.C.; Syono, M.I.; Hashim, A.M. Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection. ACS Appl. Mater. Interfaces 11 (2019) 4625-4636. (WoS-Q1)
  3. Ooi, P.C.; Haniff, M.A.S.M.; Wee, M.F.M.R.; Dee, C.F.; Goh, B.T.; Mohamed, M.A.; Majlis, B.Y. Reduced Graphene Oxide Preparation and Its Applications in Solution-Processed Write-Once-Read-Many-Times Graphene-Based Memory Device. Carbon 124 (2017) 547-554. (WoS-Q1)
  4. Haniff, M.A.S.M.; Hafiz, S.M.; Huang, N.M.; Rahman, S.A.; Wahid, K.A.A.; Syono, M.I. Piezoresistive Effect in Plasma-Doping of Graphene Sheet for High Performance Flexible Pressure Sensing Application. ACS Appl. Mater. Interfaces 9(17) (2017) 15192-15201. (WoS-Q1)
  5. Haniff, M.A.S.M., Hafiz, S.M.; Huang, N.M.; Rahman, S.A.; Wahid, K.A.A.; Syono, M.I. Nitrogen-doped Multiwalled Carbon Nanotubes Decorated with Copper(I) Oxide Nanoparticles with Enhanced Capacitive Properties. J. Mater. Sci. 52(11) (2017) 6280-6290. (WoS-Q1)
  6. Haniff, M.A.S.M.; Hafiz, S.M.; Wahid, K.A.A.; Endut, Z.; Lee, H.W.; Bien, D.C.S.; Azid, I.A.; Abdullah, M.Z.; Huang, N.M.; Rahman, S.A. Piezoresistive Effects in Controllable Defective HFTCVD Graphene-Based Flexible Pressure Sensor. Sci. Rep. 5 (2015) 14751. (WoS-Q1)

 

Patent:

  1. Method for forming Bernal-stacking in graphene layers. (Application No.: PI 2018002033)
    Self-assembled graphene bump. (Application No.: PI 20170001970)
  2. Fabrication of large-scale n-type graphene with main graphitic-N content. (Application No.: PI 2017001820)
    A method of forming heterogeneous carbon-capped magnetic nanoparticles for giant magnetoresistance effect. (Application No.: PI 2017001433)
  3. A method for forming graphene oxide patterns on a wafer-scale level. (Application No.: PI 2016002288)
  4. Inkjet-printable graphene-based conductive ink. (Application No.: PI 2016002041)
  5. A method of forming carbon microstructures on a substrate. (Application No.: PI 20160001036)
  6. Strained graphene and a method of fabrication thereof. (Application No.: PI 2015701632)
  7. A graphene pressure sensor. (Application No.: PI 2015701616)
    Ion-sensitive field-effect transistor (ISFET) with nanostructures and fabrication method thereof. (Application No.: PCT/MY2015/000033)
  8. A pressure sensor. (Application No.: PCT/MY2013/000270)
    Dual range pressure sensor. (Application No.: PCT/MY2013/000268)
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