Sains Malaysiana 49(12)(2020): 2997-3005

http://dx.doi.org/10.17576/jsm-2020-4912-11

 

Enhanced Performance of Quantum Dots Sensitized Solar Cell Utilizing Copper Indium Sulfide and Reduced-Graphene Oxide with the Presence of Silver Sulfide

(Peningkatan Prestasi Sel Suria Dipekakan Titik Kuantum menggunakan Tembaga Indium Sulfida dan Grafin Oksida Terturun dengan Kehadiran Perak Sulfida)

 

NURUL SYAFIQAH MOHAMED MUSTAKIM1,2, MUHAZRI ABD MUTALIB2, SUHAILA SEPEAI2, NORASIKIN AHMAD LUDIN2, MOHD ASRI MAT TERIDI2 & MOHD ADIB IBRAHIM2*

 

1Spectrum International College of Technology, 2F-26A, The Main Place Mall, Jalan USJ21/10, USJ 21, 47360 Subang Jaya, Selangor Darul Ehsan, Malaysia

 

2Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

Received: 12 August 2020/Accepted: 27 August 2020

 

ABSTRACT

In this study, rGO/CuInS2 has been successfully prepared onto TiO2 thin film using solvothermal method followed by Ag2S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology, structural, and optical properties of TiO2/rGO/CuInS2 thin film were investigated by using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscope (AFM), X-ray diffraction (XRD) and ultra-violet-visible near infrared spectrophotometer (UV-Vis). For electrical properties, electrochemical impedance spectra (EIS) and current-voltage (I-V) test investigated the interfacial charge-transfer resistances and the conversion efficiency of the samples. Results showed that the average particles size of the samples ranged from ±46.52 to ±53.97 nm in diameter. UV-VIS analysis indicated that TiO2/rGO/CuInS2 thin film showed better light absorption capability with the presence of Ag2S deposition layers. The rGO/CuInS2 quantum dot sensitized with Ag2S layers exhibit a photovoltaic power conversion efficiency of 0.33%, which has great improvement of short circuit current (ISC) comparing with that of rGO/CuInS2 quantum dot sensitized without Ag2S deposition layers.

 

Keywords: Ag2S; CuInS2; quantum dots; rGO; SILAR; solar cells; solvothermal

 

ABSTRAK

Dalam kajian ini, rGO/CuInS2 telah berjaya disediakan ke atas filem nipis TiO2 dengan menggunakan kaedah solvoterma diikuti dengan lapisan pemendapan Ag2S melalui teknik penjerapan dan tindak balas lapisan ion berturut-turut (SILAR). Sifat morfologi, struktur dan optik bagi filem nipis TiO2/rGO/CuInS2 dikaji dengan menggunakan mikroskopi elektron imbasan bidang (FESEM), spektroskopi sinar-X penyebaran tenaga (EDX), mikroskop kekuatan atom (AFM), difraksi sinar-X (XRD) dan spektrofotometer dekat inframerah ultraungu boleh nampak (UV-VIS). Untuk sifat elektrik, ujian elektrokimia impedansi spektra (EIS) dan arus-voltan (I-V) mengkaji rintangan pemindahan cas antara muka dan kecekapan penukaran sampel. Hasil kajian menunjukkan bahawa ukuran purata bagi sampel hablur adalah berkisar antara ± 46.52 hingga ± 53.97 nm. Analisis UV-VIS menunjukkan bahawa filem nipis TiO2/rGO/CuInS2 menunjukkan keupayaan penyerapan cahaya yang lebih baik dengan adanya lapisan pemendapan Ag2S. Titik kuantum terpeka rGO/CuInS2 dengan lapisan Ag2S menunjukkan kecekapan penukaran kuasa fotovoltan sebanyak 0.33%, yang mempunyai peningkatan arus litar pintas (ISC) yang besar berbanding dengan titik kuantum terpeka rGO/CuInS2 tanpa lapisan pemendapan Ag2S.

 

Kata kunci: Ag2S; CuInS2; rGO; sel suria; SILAR; solvoterma; titik kuantum

 

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*Corresponding author; email: mdadib@ukm.edu.my

   

 

 

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