Sains Malaysiana 43(6)(2014): 861–866

 

A Review on Modeling the Channel Potential in Multi-Gate MOSFETs

(Ulasan Terhadap Model Keupayaan Saluran dalam Multi-Gate MOSFET)

 

 

HOSSEIN MOHAMMADI1*, HUDA ABDULLAH1& CHANG FU DEE2

 

 

1Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering

Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia

 

2Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor, Malaysia

 

Diserahkan: 25 April 2013/Diterima: 23 Januari 2014

 

 

ABSTRACT

This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

 

Keywords: Multi-gate SOI MOSFETs; natural channel length; potential distribution; short channel effects

 

ABSTRAK

Kertas ini bertujuan untuk memberikan kajian secara terperinci dan memberi penerangan yang lengkap terhadap bidang teknologi, fizik dan model pelbagai berbilang-gerbang MOSFET. Kertas ini merangkumi sinopsis gambaran matematik terhadap pengagihan potensi di sepanjang saluran pelbagai Multi Gate -MOSFET yang boleh menghasilkan sifat peranti untuk analisis komputer berkelajuan tinggi. Hubungan ini menyediakan teknologi proses dan reka bentuk litar. Ulasan ini menunjukkan bahawa teknologi berbilang-gerbang MOSFET amat diperlukan dalam domain berskala nano. Terdapat banyak juga permintaan untuk model analitikal dan ulasan ini boleh menerangkan secara jelas berkenaan fizik dan operasi peranti tersebut.

 

Kata kunci: Berbilang-gerbang SOI MOSFETs; kesan alur; keupayaan agihan; panjang alur asli

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*Pengarang untuk surat-menyurat; email: h.mohammadi@eng.ukm.edu.my

 

 

 

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