Sains Malaysiana 46(7)(2017): 1061–1067

http://dx.doi.org/10.17576/jsm-2017-4607-07

 

Pencirian Pertumbuhan Lapisan Nano Grafin di atas Elektrod antara Digit Superkapasitor MEMS

(Characterization of Graphene Nanolayers Grown on MEMS Interdigital Supercapacitor Electrode)

 

HAFZALIZA ERNY ZAINAL ABIDIN, AZRUL AZLAN HAMZAH* & BURHANUDDIN

YEOP MAJLIS

 

Institute of Microengineering and Nanoelectronics (IMEN). Universiti Kebangsaan Malaysia,

43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

Diserahkan: 23 Disember 2016/Diterima: 17 Februari 2017

 

ABSTRAK

Superkapasitor MEMS khususnya dengan reka bentuk elektrod antara digit (IDE), telah menarik minat pada masa kini dalam bidang seperti bioMEMS, bioperubatan implan, peranti kuasa elektronik dan aplikasi berkuasa tinggi disebabkan kapasiti pengecasannya yang tinggi. Kajian ini membentangkan superkapasitor MEMS dengan lapisan nano grafin tumbuh di atas elektrod. Superkapasitor MEMS terdiri daripada silikon dioksida (SiO₂), nikel, grafin, polipirol (Ppy) dan lapisan alkohol polivinil (PVA). Tumpuan diberikan kepada fabrikasi struktur lapisan nano grafin atas elektrod superkapasitor MEMS melalui beberapa proses seperti pemendapan wap kimia secara peningkatan plasma (PECVD), penyejatan alur e dan salutan pusing. Grafin tumbuh melalui proses PECVD selama 10 minit pada kuasa 40 Watt dan pada suhu antara 400°C dan 1000°C. Spektrum Raman menunjukkan puncak pada 1340 dan 1580 cm^-1 mewakili jalur D dan G. Puncak 2D wujud dalam julat 2600 - 3000 cm^-1. Nisbah bagi keamatan puncak 2D terhadap puncak G pada 1000°C adalah 0.43 menunjukkan kualiti yang baik bagi banyak lapisan grafin.

 

Kata kunci: Bioperubatan implan; elektrod antara digit; grafin tumbuh; pemendapan wap kimia secara peningkatan plasma (PECVD); superkapasitor MEMS

 

ABSTRACT

MEMS supercapacitor, specifically with interdigital (IDE) electrodes design, has recently gained much interest in fields such as bioMEMS, biomedical implants, power electronic devices and high power applications due to its high charging capacity. This research presents a MEMS supercapacitor with graphene nanolayers grown on its electrodes. The MEMS supercapacitor consists of silicon dioxide (SiO₂), nickel, graphene, polypyrrole (Ppy) and polyvinyl alcohol (PVA) layers. This paper more focus on the fabrication of graphene nanolayer structures on MEMS supercapacitor electrodes via several subsequent plasma-enhanced chemical vapor deposition (PECVD), E-beam evaporation and spin coating processes. PECVD graphene was grown for 10 min at 40 Watt at temperatures between 400°C and 1000°C. Raman spectrum indicates peaks at 1340 and 1580 cm^-1 corresponding to D and G band, respectively. The 2D peaks appear in range of 2600 to 3000 cm^-1. The intensity ratio of 2D and G peaks at 1000°C is 0.43, which indicates a good quality of multilayer graphene.

 

Keywords: Biomedical implants; graphene grown; interdigital electrode (IDE); MEMS supercapacitor; plasma-enhanced chemical vapor deposition (PECVD)

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*Pengarang untuk surat-menyurat; email: azlanhamzah@ukm.edu.my