Sains Malaysiana 38(5)(2009): 679–683

Kesan Pengedopan Rendah ke atas Bahan Nanostruktur ZnO:Al

sebagai Lapisan Anti-Pantulan

(Low-Doping Effect on Nanostructured ZnO:Al as Anti-Reflecting Coating)

Huda Abdullah*, Nor Habibi Saadah & Nugroho Ariyanto

Fakulti Kejuruteraan dan Alam Bina

Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor, D.E., Malaysia

Muhamad Mat Salleh

Institut Kejuruteraan Mikro dan Nanoelektronik (IMEN)

Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor, D.E., Malaysia

Received: 8 October 2008 / Accepted: 27 February 2009

ABSTRAK

Kesan gantian Al berkepekatan rendah pada tapak-Zn sebagai lapisan anti-pantulan (LAP) untuk bahan Zn1-xAlxO ke atas pencirian struktur, morfologi dan sifat optik telah dikaji. Sampel Zn1-xAlxO dengan x = 0.00, 0.05, 0.10 and 0.15 telah disintesis dengan menggunakan kaedah sol-gel. Filem yang diperolehi dengan kaedah sol-gel telah disepuh lindap pada 400¡C selama 2 jam. Kaedah pembelauan sinar-X (XRD) dan Mikroskop Elektron Imbasan (SEM) digunakan untuk mencirikan struktur dan morfologi filem. Spektrum XRD menunjukkan semua sampel mempunyai struktur heksagonal. Saiz partikel menurun apabila kepekatan Al meningkat. Filem ini mempunyai struktur filem yang padat dan tebal serta berkesan untuk memerangkap cahaya dalam filem nipis sel suria. Sifat optik telah dicirikan dengan menggunakan spektrometer UV-Vis-NIR dan fotoluminesen. Peningkatan nilai jurang tenaga penting sebagai unsur lapisan anti pantulan. Oleh itu, filem ini boleh digunakan sebagai lapisan anti-pantulan untuk sel solar.

Kata kunci: Lapisan anti-pantulan; struktur nano; ZnO

ABSTRACT

The effects of substituting low concentration Al at Zn-site as an anti-reflecting coating (ARC) for Zn1-xAlxO compound on structural, morphological and optical properties have been studied. Zn1-xAlxO sample with x = 0.00, 0.05, 0.10 and 0.15 were synthesized via a sol gel method. The films obtained from the sol gel have been annealed at 400¡C for 2 hours. X-ray diffraction Method (XIR) and Scanning Electron Microscope (SEM) have been used for structural characterization and morphology of the film. XRD spectra show all samples exhibit hexagonal structure. The particle size decreases with increasing Al concentration. These films exhibit a dense and compact film structure that could be effective for light trapping in thin film solar cells. The optical property has been characterised using UV-Visible-NIR and photoluminescence spectrometer. The band gaps increase as the concentration of Al increases. The increase of the band gap is an important requirement for good anti-reflecting coating element. Therefore these films can be applied as anti-reflecting coating thin film for solar cells.

Keywords: Anti-reflecting coating; Nanostructure; ZnO

REFERENCES

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*Corresponding author; email: melancholia143@yahoo.com