Sains Malaysiana 41(8)(2012): 1023–1028

 

 

Effect of TMAH Etching Duration on the Formation of Silicon Nanowire

Transistor Patterned by AFM Nanolithography

(Kesan Tempoh Punaran TMAH ke atas Penghasilan Transistor Nanodawai Silikon

Tercorak Menggunakan Nanolitografi Mikroskop Daya Atom)

Sabar D. Hutagalung* & Kam C. Lew

School of Materials and Mineral Resources Engineering, Engineering Campus

Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

 

Received: 25 January 2010 / Accepted: 19 September 2011

 

ABSTRACT

Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nanopatterns. A conductive AFM tip was used to grow the silicon oxide nanopatterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nanowire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nanowire transistor structure has been investigated. A completed silicon nanowire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nanowire transistor consists of a silicon nanowire that acts as a channel with source and drain pads. A lateral gate pad with a nanowire head was fabricated very close to the channel in the formation of transistor structures.

 

Keywords: Etching duration; nanolotography AFM; silicon nanowire; TMAH; transistor

 

ABSTRAK

Litografi mikroskop daya atom (AFM) telah diguna untuk menghasilkan corak skala nano untuk fabrikasi transistor nanowayar silikon. Teknik ini menggunakan kemudahan pengimejan AFM dan keupayaan mengawal pergerakan kuar di atas permukaan sampel untuk mewujudkan nanocorak. Hujung AFM yang konduktif telah digunakan untuk menghasilkan wafer nanocorak oksida silikon pada silikon di atas penebat (SOI). Voltan pada hujung sampel yang dikenakan dan kelajuan tulisan dikawal dengan baik untuk menghasilkan strukutur pra-bentuk transistor nanowayar silikon oksida. Kesan tempoh punaran tetra metil ammonium hidroksida (TMAH) terhadap oksida yang dilindungi struktur transistor nanowayar silikon telah dikaji. Transistor nanowayar silikon telah diperoleh dengan mengeluarkan lapisan oksida melalui proses punaran asid hidrofluorik. Transistor nanowayar silikon terdiri daripada nanowayar silikon yang bertindak sebagai saluran dengan pad sumber dan salir. Pad get sisi dengan kepala nanowayar telah direka bentuk berhampiran dengan saluran dalam pembentukan struktur transistor.

 

Kata kunci: Nanowayar silikon; nanolitografi AFM; tempoh punaran; TMAH; transistor

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*Corresponding author; email: mrsabar@eng.usm.my

 

 

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