Sains Malaysiana 43(6)(2014): 923–927

 

Structural Properties of Zinc Oxide Thin Films Deposited on Various Substrates

(Ciri Struktur Filem Nipis Zink Oksida yang Dimendapkan di atas Substrat Berlainan)

C.G. CHING*, P.K. OOI, S.S. NG, Z. HASSAN, H. ABU HASSAN & M.J. ABDULLAH

 

Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

 

Received: 2 March 2013/Accepted: 26 January 2014

 

ABSTRACT

 

 In this work, the structural properties of radio frequency sputtering-grown zinc oxide (ZnO) thin films on sapphire (Al2O3), gallium arsenide (GaAs) and n-type silicon (Si) substrates were characterized. Scanning electron microscopy was employed to study the surface morphology of the samples. X-ray diffraction (XRD) measurements were also performed to obtain the structural information of the samples. The XRD results showed that the ZnO layers grown on different substrates have similar lattice constant (c) values, which were used to calculate the strain percentages of the ZnO thin films. The surface morphologies of the ZnO thin films indicated the formation of a granular surface when ZnO is deposited on n-type Si(100) and Si(111) substrates. Meanwhile, a leaf-like surface is obtained when ZnO is deposited on GaAs and Al2O3 substrates. The results showed that the ZnO thin film grown on n-type Si(100) has the best quality among all the samples.

 

Keywords: Gallium arsenide; sapphire; silicon; XRD; zinc oxide  

 

ABSTRAK

 

 Dalam kajian ini, pencirian struktur filem nipis zink oksida (ZnO) yang ditumbuhkan dengan teknik percikan frekuensi radio ke atas substrat nilam (Al2O3), galium arsenik (GaAs) dan silikon (Si) jenis-n telah dijalankan. Mikroskop elektron imbasan digunakan untuk memperoleh morfologi permukaan sampel manakala pembelauan sinar-X (XRD) pula digunakan untuk memperoleh maklumat struktur bagi sampel. Keputusan XRD menunjukkan ZnO yang ditumbuhkan di atas substrat berlainan mempunyai pemalar kekisi paksi-c yang hampir sama. Nilai pemalar kekisi paksi-c yang diperoleh digunakan untuk menghitung peratusan ketegangan filem nipis ZnO. Morfologi permukaan filem nipis ZnO menunjukkan pembentukan permukaan bercorak butiran apablia ZnO ditumbuhkan ke atas substrat Si(100) dan Si(111) jenis-n dan permukaan bercorak daun diperoleh apabila ZnO ditumbuhkan ke atas substrat GaAs dan Al2O3. Akhirnya, keputusan XRD menunjukkan bahawa filem nipis yang ditumbuhkan ke atas Si(100) jenis-n mempunyai kualiti kristal yang terbaik antara sampel.

Kata kunci: Galium arsenida; nilam; pembelauan sinar-X; silikon; zink oksida

REFERENCES

Ashrafi, A.B.M.A., Zhang, B.P., Binh, N.T., Wakatsuki, K. & Segawa, Y. 2005. Biaxial strain effect in exciton resonance energies of epitaxial ZnO layers grown on 6H–SiC substrates. J. Cryst. Growth 275: e2439-e2443.

Ashrafi, A.B.M.A., Zhang, B.P., Nguyen, B.T. & Segawa, Y. 2004. High-quality ZnO layers grown on 6H-SiC substrates. Jpn. J. Appl. Phys. 43: 1114-1117.

Bie, L.J., Yan, X.N., Yin, J., Duan, Y.Q. & Yuan, Z.H. 2007. Nanopillar ZnO gas sensor for hydrogen and ethanol. Sensor Actuat. B-Chem. 126: 604-608.

Chang, R.C., Chu, S.Y., Lo, K.Y., Lo, S.C. & Huang, Y.R. 2005. Physical and structural properties of RF magnetron sputtered ZnO films. Integr. Ferroelectr. 69: 43-53.

Choudhury, N. & Sarma, B.K. 2009. Structural characterization of lead sulfide thin films by means of X-ray line profile analysis. Bull. Mater. Sci. 32: 43-47.

Hung, S.C., Huang, P.J., Chan, C.E., Uen, W.Y., Ren, F., Pearton, S.J., Yang, T.N., Chiang, C.C., Lan, S.M. & Chi, G.C. 2008. Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition. Appl. Surf. Sci. 255: 3016-3018.

Iwata, K., Fons, P., Yamada, A., Matsubara, K. & Niki, S. 2000. Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE. J. Cryst. Growth 209: 526-531.

Jeon, Y.S., Kim, D.M. & Hwang, K.S. 2007. Epitaxially grown ZnO thin films on 6H-SiC(0001) substrates prepared by spin coating-pyrolysis. Appl. Surf. Sci. 253: 7016-7018.

Kang, M.I., Kim, S.W., Kim, Y.G. & Ryu, J.W. 2010. Dependence of the optical anisotropy of ZnO thin films on the structural properties. J. Korean Phys. Soc. 57: 389-394.

Kim, E.H., Lee, D.H., Chung, B.H., Kim, H.S., Kim, Y. & Noh, S.J. 2007. Low-temperature growth of ZnO thin films by atomic layer deposition. J. Korean Phys. Soc. 50: 1716-1718.

Kim, J.B., Byun, D., Ie, S.Y., Park, D.H., Choi, W.K., Choi, J.W. & Angadi, B. 2008. Cu-doped ZnO-based p–n hetero-junction light emitting diode. Semicond. Sci. Tech. 23: 095004.

Kumar, M., Kar, J.P., Kim, I.S., Choi, S.Y. & Myoung, J.M. 2010. Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction. Curr. Appl. Phys. 11: 65-69.

Lee, J.H., Kim, Y.Y., Cho, H.K. & Lee, J.Y. 2009. Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering. J. Cryst. Growth 311: 4641- 4646.

Ma, Y., Du, G., Yin, J., Yang, T. & Zhang, Y. 2005. Structural and optoelectrical properties of ZnO thin films deposited on GaAs substrate by metal-organic chemical vapour deposition (MOCVD). Semicond. Sci. Technol. 20: 1198-1202.

Matsumoto, T., Nishimura, K., Nabetani, Y. & Kato, T. 2004. MBE growth and optical properties of ZnO on GaAs(111) substrates. Phys. Stat. Sol. (b) 241: 591-594.

Ryu, Y.R., Lee, T.S., Lubguban, J.A., White, H.W., Park, Y.S. & Youn, C.J. 2005. ZnO devices: Photodiodes and p-type field-effect transistors. Appl. Phys. Lett. 87: 153504.

Schuler, L.P., Alkaisi, M.M., Miller, P., Reeves, R.J. & Markwitz, A. 2005. Comparison of DC and RF sputtered zinc oxide films with post-annealing and dry etching and effect on crystal composition. Jpn. J. Appl. Phys. 44: 7555-7560.

Talla, K., Dangbégnon, J.K., Wagener, M.C. & Botha, J.R. 2010. ZnO grown by metal organic chemical vapor deposition: Effect of substrate on optical and structural properties. South African Institute of Electrical Engineers 101: 37-41.

Yang, X.L., Chen, N.F., Yin, Z.G., Zhang, X.W., Li, Y., You, J.B., Wang, Y., Dong, J.J., Cui, M., Gao, Y., Huang, T.M., Chen, X.F. & Wang, Y.S. 2010. Epitaxial growth of ZnO on GaN/ sapphire substrate by radio-frequency magnetron sputtering. J. Semicond. 31: 093001.

 

*Corresponding author; email: chingchinguan@gmail.com

 

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