Sains Malaysiana 49(12)(2020): 2941-2950

http://dx.doi.org/10.17576/jsm-2020-4912-06

Structural and Photoluminescence Analysis on the Implantation of Carbon and Proton for the Creation of Damage-Assisted Emission in Silicon

(Struktur dan Analisis Fotoluminasi pada Penanaman Karbon dan Proton untuk Penghasilan Pelepasan Kerosakan-Berbantu dalam Silikon)

NURUL ELLENA ABDUL RAZAK¹, MORGAN MADHUKU², ISHAQ AHMAD³, BURHANUDDIN YEOP MAJLIS¹, CHANG FU DEE¹ & DILLA DURYHA BERHANUDDIN¹*

¹Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

²iThemba Laboratory for Accelerator Based Science (LABS), Private Bag 11, Wits 2050 Johannesburg, South Africa

³NPU-NCP Joint International Research Center on Advanced, Nanomaterials and Defects Engineering, National Centre for Physics, Islamabad 44000, Pakistan

Received: 20 July 2020/Accepted: 17 August 2020

ABSTRACT

We study the induced defects in the depth profiling of the silicon structure after being implanted with carbon and followed by high energy proton irradiation. It has been reported before that the formation of the optically active point-defect, specifically the G-centre is due to the implantation and irradiation of carbon and proton, respectively. It is crucial to quantify the diffusional broadening of the implanted ion profile especially for proton irradiation process so that the radiation damage evolution can be maximized at the point-defect formation region. Profiling analysis was carried out using computational Stopping and Range of Ions in Matter (SRIM) and Surrey University Sputter Profile Resolution from Energy Deposition (SUSPRE) simulation. The energies of carbon ions adopted for this investigation are 10, 20, 30, and 50 keV, while proton irradiation energy was kept at 2 MeV. Photoluminescence measurements on silicon implanted with carbon at different energies were carried out to study the interrelation between the numbers of vacancies produced during the damage event and the peak emission intensities.

Keywords: Carbon; ion implantation; proton; silicon; SRIM

ABSTRAK

Kami melaporkan kecacatan dalam profil kedalaman struktur silikon selepas ditanamkan dengan karbon dan diikuti dengan penyinaran proton bertenaga tinggi. Sebelum ini telah dilaporkan bahawa pembentukan kecacatan titik berkeaktifan optik, khususnya pusat-G adalah disebabkan oleh implantasi karbon dan sinaran proton. Adalah penting untuk mengkuantifikasikan pelebaran profil implantasi ion terutamanya untuk proses penyinaran proton supaya evolusi kerosakan radiasi boleh dimaksimumkan di kawasan pembentukan titik kecacatan. Analisis profil dilakukan dengan menggunakan Perhitungan Pengiraan dan Julat Ion dalam Jisim (SRIM) dan simulasi SUSPRE. Tenaga ion karbon yang dikaji adalah 10, 20, 30, dan 50 keV, manakala tenaga penyinaran proton ditetapkan pada 2 MeV. Pengukuran fotoluminasi terhadap silikon yang telah ditanam dengan karbon pada tenaga yang berbeza dilakukan untuk mengkaji hubungan antara jumlah kekosongan yang dihasilkan semasa kejadian kerosakan dengan keamatan pelepasan.

Kata kunci: Ion implan; karbon; proton; silikon; SRIM

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*Corresponding author; email: dduryha@ukm.edu.my