Sains Malaysiana 36(1): 53-57 (2007)

 

 

Borophosphosilicate Glass (BPSG) Reflow Characterization

For  Submicron CMOS Technology

(Pencirian Kaca Borophosphosilicat(BPSG) bagi Teknologi Submikron CMOS)

 

 

Uda Hashim, Ramzan Mat Ayub & Nik Hazura N. Hamat

Micro Fabrication Cleanroom, School of Microelectronic Engineering

Kolej Universiti Kejuruteraan Utara Malaysia

02000 Kuala Perlis, Perlis, Malaysia

 

 

 

ABSTRACT

 

This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for 0.35µm technology using steam annealing method at different temperatures. This process allows the planarization of wafers with thin layer at its surface. In this paper we present the comparison between the effect of hydrofluoric acid (HF) staining on the cross sectional topography with the samples without hydrofluoric acid (HF) staining analyzed by field emission scanning electron microscopy (FESEM). We found that staining with HF produced clearer images.

 

Keywords: borophosphosilicate glass; steam annealing; hydrofluoric acid staining

 

 

ABSTRAK

 

Kajian ini melibatkan pensatahan filem kaca borophosphosilicat (BPSG) dengan menggunakan suatu resipi baru proses sepuh lindap bagi memperbaiki kerataan filem tersebut selepas proses pengaliran semula. Pembaikan ini diaplikasikan bagi teknologi 0.35µm menggunakan teknik sepuh lindap stim pada suhu yang berbeza. Proses ini membolehkan pensatahan wafer dengan filem nipis pada permukaannya. Kertas kerja ini memfokuskan perbandingan di antara sampel yang dicelupkan di dalam asid hidrofluorik (HF) dan sampel yang tidak dicelupkan ke dalam asid hidrofluorik (HF) yang dianalisis menggunakan field emission scanning electron microscopy (FESEM) dan didapati sampel yang dicelupkan di dalam asid hidrofluorik memberikan imej yang lebih jelas.

 

Kata kunci: kaca borophosphosilikat; sepuhlindap stim; pencelupan asid hidrofluorik

 

 

RUJUKAN/REFERENCES

 

French P.J., & Wolffenbuttel R.F. 1993. Reflow of BPSG For Sensor Applications J. Micromac. Microeng. 3:135-137.

Hashim U. & Mat Ayub R. 2004. Field Emission Scanning Electron Microscopy Analysis of Metal Step Coverage Improvement by Reflow, Journal of the Institute of Materials Malaysia 5(2): 105-113.

Marks J., Law K. & Wang D. 1989. In Situ Planarization of Dielectric Surfaces Using Boron Oxide,  VMIC Conference, 89-95.

Oberemerok O. & Lytvyn P. 2000. Borophosphosilicate Glass Component Analysis Using Secondary Neutral Mass Spectrometry, Semiconductor Physics, Quantum Electronics & Optoelectronics, 5: 101-105.

Simpson D. L., Croswell R. T., Reisman A., Temple D. & Williams C.K., 1999. Planarization Processes and Applications: I Undoped GeO2- SiO2 Glasses, Journal of The Electrochemical Society, 146(10): 3860-3871.

Thakur, R.P.S, Gonzalez, F.,.Hawthorne, R, Ward,  V. & Jeng, N. 1993. Reduced thermal budget borophosphosillicate glass (BPSG) fusion and implant activation using rapid thermal annealing and steam reflow, Material Research Society Symposium Proceeding 303: 283.

Xia L.Q, Conti R., Galiano, M., Campana, F., Chandran, S., Cote, D., Restino D., & Yieh E., 1999. High aspect Trench Filling Using Two-Step Subatmospheric Chemical Vapor Deposited Borophospholicate Glass for 0.18 µm Device Application, Journal of The Electrochemical Society, 146(5):1884-1888.

 

 

 

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