Publications

  • M. Bukhori, “Dare we aim for a mission to the moon?,” New straits times, 22 september 2023., 2023.
    [Bibtex]
    @article{bukhori2023dare,
    title={Dare we aim for a mission to the moon?},
    author={Bukhori, MF},
    journal={New Straits Times, 22 September 2023.},
    year={2023},
    publisher={https://www.nst.com.my/opinion/letters/2023/09/958187/dare-we-aim-mission-moon}
    }
  • M. Bukhori, M. Mohd-Nor, and A. Ismail, “Evaluating final-year student classroom communication at the faculty of engineering and built environment ukm,” Jurnal kejuruteraan, vol. 35, iss. 4, p. 843–848, 2023.
    [Bibtex]
    @article{bukhori2023evaluating,
    title={Evaluating Final-Year Student Classroom Communication at the Faculty of Engineering and Built Environment UKM},
    author={Bukhori, MF and Mohd-Nor, MFI and Ismail, AH},
    journal={Jurnal Kejuruteraan},
    volume={35},
    number={4},
    pages={843--848},
    year={2023}
    }
  • M. Bukhori, “An ‘a’ for ai in education,” New straits times, 23 december 2022., 2022.
    [Bibtex]
    @article{bukhori2022ai,
    title={An 'A' for AI in education},
    author={Bukhori, MF},
    journal={New Straits Times, 23 December 2022.},
    year={2022},
    publisher={https://www.nst.com.my/opinion/letters/2022/12/863580/ai-education}
    }
  • M. F. I. Mohd-Nor, M. S. Suhaimi, and M. F. Bukhori, “Perbandingan keberkesanan kaedah mendokumentasikan maklumat bangunan warisan melalui perwakilan digital bim dan cad,” Journal of design + built, vol. 15, iss. 1, p. 135–150, 2022.
    [Bibtex]
    @article{mohd2022perbandingan,
    title={Perbandingan Keberkesanan Kaedah Mendokumentasikan Maklumat Bangunan Warisan Melalui Perwakilan Digital BIM Dan CAD},
    author={Mohd-Nor, M. F. I. and Suhaimi, M. S. and Bukhori, M. F.},
    journal={Journal of Design + Built},
    volume={15},
    number={1},
    pages={135--150},
    year={2022}
    }
  • M. Bukhori, M. Mohd-Nor, M. Tahir, and A. Ismail, “Evaluation of architecture student classroom communication at universiti kebangsaan malaysia,” Journal of design + built, vol. 15, iss. 1, p. 45–52, 2022.
    [Bibtex]
    @article{bukhori2022evaluation,
    title={Evaluation of Architecture Student Classroom Communication at Universiti Kebangsaan Malaysia},
    author={Bukhori, MF and Mohd-Nor, MFI and Tahir, MM and Ismail, AH},
    journal={Journal of Design + Built},
    volume={15},
    number={1},
    pages={45--52},
    year={2022}
    }
  • M. Bukhori, “Automation can spur growth, employment opportunities,” New straits times, 21 july 2022., 2022.
    [Bibtex]
    @article{bukhori2022automation,
    title={Automation can spur growth, employment opportunities},
    author={Bukhori, MF},
    journal={New Straits Times, 21 July 2022.},
    year={2022},
    publisher={https://www.nst.com.my/opinion/letters/2022/07/815258/automation-can-spur~…}
    }
  • K. A. A. Ghani, M. M. Tahir, L. Y. Chen, and M. F. Bukhori, “Penerapan elemen berpanggung kepada reka bentuk rumah teres di malaysia untuk mencapai keselesaan terma melalui pengudaraan semula jadi,” Journal of design+ built, vol. 14, iss. 1, 2021.
    [Bibtex]
    @article{ghani2021penerapan,
    title={PENERAPAN ELEMEN BERPANGGUNG KEPADA REKA BENTUK RUMAH TERES DI MALAYSIA UNTUK MENCAPAI KESELESAAN TERMA MELALUI PENGUDARAAN SEMULA JADI},
    author={Ghani, Khairul Anwar Abdul and Tahir, Mazlan Mohd and Chen, Leong Yin and Bukhori, Muhammad Faiz},
    journal={Journal of Design+ Built},
    volume={14},
    number={1},
    year={2021}
    }
  • M. M. Tahir, K. M. Safaai, and M. F. Bukhori, “Fasad hijau sebagai pendekatan mampan bagi negara panas tropika,” Journal of design+ built, vol. 14, iss. 1, 2021.
    [Bibtex]
    @article{tahir2021fasad,
    title={FASAD HIJAU SEBAGAI PENDEKATAN MAMPAN BAGI NEGARA PANAS TROPIKA},
    author={Tahir, Mazlan Mohd and Safaai, Khairunnadia Mohd and Bukhori, Muhammad Faiz},
    journal={Journal of Design+ Built},
    volume={14},
    number={1},
    year={2021}
    }
  • W. T. Kuan, M. F. Bukhori, and A. H. Ismail, “Prototype development of a smart voice-controlled audio system based on the raspberry pi platform,” Jurnal kejuruteraan, vol. 31, iss. 2, p. 341–348, 2019.
    [Bibtex]
    @article{kuan2019prototype,
    title={Prototype Development of a Smart Voice-Controlled Audio System Based on the Raspberry Pi Platform},
    author={Kuan, Weng Thong and Bukhori, Muhammad Faiz and Ismail, Abdul Halim},
    journal={Jurnal Kejuruteraan},
    volume={31},
    number={2},
    pages={341--348},
    year={2019},
    publisher={UKM Press}
    }
  • A. Hee, M. M. Tahir, A. H. Ismail, and M. Bukhori, “The potential of efficient water management system in high-rise design,” Journal of design+ built, vol. 11, iss. 1, 2018.
    [Bibtex]
    @article{hee2018potential,
    title={THE POTENTIAL OF EFFICIENT WATER MANAGEMENT SYSTEM IN HIGH-RISE DESIGN},
    author={Hee, AB and Tahir, Mazlan Mohd and Ismail, Abdul Halim and Bukhori, MF},
    journal={Journal of Design+ Built},
    volume={11},
    number={1},
    year={2018}
    }
  • N. A. Husen, I. Usman, M. M. Sulaiman, and M. Bukhori, “Strategi kelestarian dalam bangunan tinggi,” Journal of design+ built, vol. 11, iss. 1, 2018.
    [Bibtex]
    @article{husen2018strategi,
    title={STRATEGI KELESTARIAN DALAM BANGUNAN TINGGI},
    author={Husen, Nor Afifah and Usman, IMS and Sulaiman, MKA Mat and Bukhori, MF},
    journal={Journal of Design+ Built},
    volume={11},
    number={1},
    year={2018}
    }
  • W. T. Kuan and M. F. Bukhori, “Smart audio system based on voice command,” in Proceedings of undergraduate research 2018, 2018, p. 69–73.
    [Bibtex]
    @inproceedings{kuan2018smart,
    title={Smart audio system based on voice command},
    author={Kuan, Weng Thong and Bukhori, Muhammad Faiz},
    booktitle={Proceedings of Undergraduate Research 2018},
    pages={69--73},
    year={2018}
    }
  • V. Thangasamy, N. A. Kamsani, M. N. Hamidon, S. J. Hashim, Z. Yusoff, and M. F. Bukhori, “Digital-controlled multimode multiband power amplifier with multiple gated transistor,” Iete technical review, vol. 34, iss. 1, p. 48–57, 2017.
    [Bibtex]
    @article{thangasamy2017digital,
    title={Digital-controlled multimode multiband power amplifier with multiple gated transistor},
    author={Thangasamy, Veeraiyah and Kamsani, Noor Ain and Hamidon, Mohd Nizar and Hashim, Shaiful Jahari and Yusoff, Zubaida and Bukhori, Muhammad Faiz},
    journal={IETE Technical Review},
    volume={34},
    number={1},
    pages={48--57},
    year={2017},
    publisher={Taylor \& Francis}
    }
  • N. F. Abdullah, A. B. Huddin, H. F. A. Wahab, M. F. Bukhori, F. H. Hashim, and M. D. W. W. Zaki, “E-pkp : penambahbaikan instrumen penilaian kendiri pelajar (pkp) bagi pengukuran tidak langsung hasil program di jkees,” in K-novasi p&p ukm 2016, 2016, p. 199–206.
    [Bibtex]
    @inproceedings{abdullah2016pkp,
    title={E-PKP : Penambahbaikan Instrumen Penilaian Kendiri Pelajar (PKP) Bagi Pengukuran Tidak Langsung Hasil Program Di JKEES},
    author={Abdullah, Nor Fadzilah and Huddin, Aqilah Baseri and Wahab, Hamimi Fadziati Abdul and Bukhori, Muhammad Faiz and Hashim, Fazida Hanim and Zaki, W Mimi Diyana W},
    booktitle={K-NOVASI P\&P UKM 2016},
    pages={199--206},
    year={2016}
    }
  • R. Jaafar, B. Bais, W. Zaki, M. Bukhori, M. Shaarani, and A. Huddin, “Correlation study of student achievement at pre-university level and their corresponding achievement in the year-one undergraduate course of circuit theory at ukm,” Pertanika journal of social sciences and humanities, vol. 24, p. 87–96, 2016.
    [Bibtex]
    @article{jaafar2016correlation,
    title={Correlation study of student achievement at pre-university level and their corresponding achievement in the year-one undergraduate course of circuit theory at UKM},
    author={Jaafar, R and Bais, B and Zaki, WMDW and Bukhori, MF and Shaarani, MFAS and Huddin, AB},
    journal={Pertanika Journal of Social Sciences and Humanities},
    volume={24},
    pages={87--96},
    year={2016}
    }
  • V. Thangasamy, V. Thiruchelvam, M. N. Hamidon, S. J. Hashim, M. F. Bukhori, Z. Yusoff, and N. A. Kamsani, “Multimode multiband power amplifier with tapped transformer for efficiency enhancement in low power mode,” in 2016 ieee international conference on semiconductor electronics (icse), 2016, p. 268–271.
    [Bibtex]
    @inproceedings{thangasamy2016multimode,
    title={Multimode multiband power amplifier with tapped transformer for efficiency enhancement in low power mode},
    author={Thangasamy, Veeraiyah and Thiruchelvam, Vinesh and Hamidon, Mohd Nizar and Hashim, Shaiful Jahari and Bukhori, Muhammad Faiz and Yusoff, Zubaida and Kamsani, Noor Ain},
    booktitle={2016 IEEE International Conference on Semiconductor Electronics (ICSE)},
    pages={268--271},
    year={2016},
    organization={IEEE}
    }
  • N. A. Kamsani, V. Thangasamy, S. J. Hashim, Z. Yusoff, M. F. Bukhori, and M. N. Hamidon, “A low power multiplexer based pass transistor logic full adder,” in 2015 ieee regional symposium on micro and nanoelectronics (rsm), 2015, p. 1–4.
    [Bibtex]
    @inproceedings{kamsani2015low,
    title={A low power multiplexer based pass transistor logic full adder},
    author={Kamsani, Noor Ain and Thangasamy, Veeraiyah and Hashim, Shaiful Jahari and Yusoff, Zubaida and Bukhori, Muhammad Faiz and Hamidon, Mohd Nizar},
    booktitle={2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)},
    pages={1--4},
    year={2015},
    organization={IEEE}
    }
  • M. F. Bukhori, N. E. Othman, A. A. A. Rahni, and N. Zainal, “Student attendance monitoring system (sams): aplikasi telefon pintar untuk memantau kehadiran pelajar,” in Kongres pengajaran & pembelajaran ukm 2015, 2015, p. 60–64.
    [Bibtex]
    @inproceedings{bukhori2015student,
    title={Student Attendance Monitoring System (SAMS): Aplikasi Telefon Pintar untuk Memantau Kehadiran Pelajar},
    author={Bukhori, Muhammad Faiz and Othman, Nor Effendy and Rahni, Ashrani A. Abd. and Zainal, Nasharuddin},
    booktitle={Kongres Pengajaran \& Pembelajaran UKM 2015},
    pages={60--64},
    year={2015}
    }
  • M. D. W. W. Zaki, B. Bais, M. F. Bukhori, R. Jaafar, M. F. A. S. Shaarani, and A. B. Huddin, “Kajian hubung kait pencapaian pelajar di peringkat pra-universiti dengan pencapaian pelajar dalam subjek teori litar di tahun satu, jkees,” in Kongres pengajaran & pembelajaran ukm 2015, 2015, p. 216–221.
    [Bibtex]
    @inproceedings{zaki2015kajian,
    title={Kajian hubung kait pencapaian pelajar di peringkat Pra-Universiti dengan pencapaian pelajar dalam subjek teori litar di tahun satu, JKEES},
    author={Zaki, W Mimi Diyana W and Bais, Badariah and Bukhori, Muhammad Faiz and Jaafar, Rosmina and Shaarani, Muhd. Fauzi Aminuddin Shazi and Huddin, Aqilah Baseri},
    booktitle={Kongres Pengajaran \& Pembelajaran UKM 2015},
    pages={216--221},
    year={2015}
    }
  • V. Thangasamy, N. A. Kamsani, V. Thiruchelvam, M. N. Hamidon, S. J. Hashim, M. F. Bukhori, and Z. Yusoff, “Wireless power transfer with on-chip inductor and class-e power amplifier for implant medical device applications,” in 2015 ieee student conference on research and development (scored), 2015, p. 422–426.
    [Bibtex]
    @inproceedings{thangasamy2015wireless,
    title={Wireless power transfer with on-chip inductor and class-E power amplifier for implant medical device applications},
    author={Thangasamy, Veeraiyah and Kamsani, Noor Ain and Thiruchelvam, Vinesh and Hamidon, Mohd Nizar and Hashim, Shaiful Jahari and Bukhori, Muhammad Faiz and Yusoff, Zubaida},
    booktitle={2015 IEEE Student Conference on Research and Development (SCOReD)},
    pages={422--426},
    year={2015},
    organization={IEEE}
    }
  • N. A. Kamsani, V. Thangasamy, M. F. Bukhori, and S. Shafie, “A multiband 130nm cmos second order band pass filter for lte bands,” in 2015 ieee international circuits and systems symposium (icsys), 2015, p. 100–105.
    [Bibtex]
    @inproceedings{kamsani2015multiband,
    title={A multiband 130nm CMOS second order band pass filter for LTE bands},
    author={Kamsani, Noor Ain and Thangasamy, Veeraiyah and Bukhori, Muhammad Faiz and Shafie, Suhaide},
    booktitle={2015 IEEE International Circuits and Systems Symposium (ICSyS)},
    pages={100--105},
    year={2015},
    organization={IEEE}
    }
  • N. A. Kamsani, V. Thangasamy, M. F. Bukhori, and S. Shafie, “A multiband 130nm cmos low noise amplifier for lte bands,” in 2015 ieee international circuits and systems symposium (icsys), 2015, p. 106–110.
    [Bibtex]
    @inproceedings{kamsani2015multiband,
    title={A multiband 130nm CMOS low noise amplifier for LTE bands},
    author={Kamsani, Noor Ain and Thangasamy, Veeraiyah and Bukhori, Muhammad Faiz and Shafie, Suhaide},
    booktitle={2015 IEEE International Circuits and Systems Symposium (ICSyS)},
    pages={106--110},
    year={2015},
    organization={IEEE}
    }
  • A. A. Rahni, N. Zainal, M. Z. Adna, N. Othman, and M. Bukhori, “Development of the online student attendance monitoring system (samstm) based on qr-codes and mobile devices,” J. eng. sci. technol, vol. 10, p. 28–40, 2015.
    [Bibtex]
    @article{rahni2015development,
    title={Development of the online student attendance monitoring system (SAMSTM) based on QR-codes and mobile devices},
    author={Rahni, AA Abd and Zainal, N and Adna, MF Zainal and Othman, NE and Bukhori, MF},
    journal={J. Eng. Sci. Technol},
    volume={10},
    pages={28--40},
    year={2015}
    }
  • H. Hussin, N. Soin, W. M. S. Hatta, and M. Bukhori, “Characterization of nbti-induced positive charges in 16 nm finfet,” in 2015 ieee international conference on electron devices and solid-state circuits (edssc), 2015, p. 365–368.
    [Bibtex]
    @inproceedings{hussin2015characterization,
    title={Characterization of NBTI-induced positive charges in 16 nm FinFET},
    author={Hussin, H and Soin, N and Hatta, S Wan Muhamad and Bukhori, MF},
    booktitle={2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)},
    pages={365--368},
    year={2015},
    organization={IEEE}
    }
  • V. Thangasamy, N. A. Kamsani, M. N. Hamidon, S. J. Hashim, Z. Yusoff, and M. F. Bukhori, “Low power 18t pass transistor logic ripple carry adder,” Ieice electronics express, vol. 12, iss. 6, p. 20150176–20150176, 2015.
    [Bibtex]
    @article{thangasamy2015low,
    title={Low power 18T pass transistor logic ripple carry adder},
    author={Thangasamy, Veeraiyah and Kamsani, Noor Ain and Hamidon, Mohd Nizar and Hashim, Shaiful Jahari and Yusoff, Zubaida and Bukhori, Muhammad Faiz},
    journal={IEICE Electronics Express},
    volume={12},
    number={6},
    pages={20150176--20150176},
    year={2015},
    publisher={The Institute of Electronics, Information and Communication Engineers}
    }
  • H. Hussin, N. Soin, W. M. S. Hatta, and M. F. Bukhori, “Impact of different nbti defect components on sub-threshold operation of high-k p-mosfet,” in Iop conference series: materials science and engineering, 2015, p. 12015.
    [Bibtex]
    @inproceedings{hussin2015impact,
    title={Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET},
    author={Hussin, H and Soin, Norhayati and Hatta, S Wan Muhamad and Bukhori, Muhammad Faiz},
    booktitle={IOP Conference Series: Materials Science and Engineering},
    volume={99},
    number={1},
    pages={012015},
    year={2015},
    organization={IOP Publishing}
    }
  • H. Hussin, N. Soin, M. Bukhori, Y. Abdul Wahab, and S. Shahabuddin, “New simulation method to characterize the recoverable component of dynamic negative-bias temperature instability in p-channel metal–oxide–semiconductor field-effect transistors,” Journal of electronic materials, vol. 43, p. 1207–1213, 2014.
    [Bibtex]
    @article{hussin2014new,
    title={New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors},
    author={Hussin, H and Soin, N and Bukhori, MF and Abdul Wahab, Y and Shahabuddin, S},
    journal={Journal of electronic materials},
    volume={43},
    pages={1207--1213},
    year={2014},
    publisher={Springer US}
    }
  • A. A. A. Rahni, A. M. Muad, S. H. M. Ali, A. Ayob, M. F. Bukhori, I. Yahya, M. S. A. Rahman, and A. Hussain, “Pengukuran dan analisis pencapaian peo alumni jkees,” in Kongres pengajaran dan pembelajaran ukm 2013, 2014, p. 284.
    [Bibtex]
    @inproceedings{rahni2014pengukuran,
    title={Pengukuran dan Analisis Pencapaian PEO Alumni JKEES},
    author={Rahni, Ashrani A. Abd. and Muad, Anuar Mikdad and Ali, Sawal Hamid Md and Ayob, Afida and Bukhori, Muhammad Faiz and Yahya, Iskandar and Rahman, Mohd Syuhaimi Ab and Hussain, Aini},
    booktitle={Kongres Pengajaran dan Pembelajaran UKM 2013},
    pages={284},
    year={2014}
    }
  • V. Thangasamy, N. A. Kamsani, M. N. Hamidon, N. Sulaiman, and M. F. Bukhori, “Q and frequency tunable second order lc bandpass filter for long term evolution (lte) receiver,” Mitteilungen klosterneuburg, vol. 64, iss. 3, p. 234–245, 2014.
    [Bibtex]
    @article{thangasamy2014q,
    title={Q and Frequency Tunable Second Order LC Bandpass Filter for Long Term Evolution (LTE) Receiver},
    author={Thangasamy, Veeraiyah and Kamsani, Noor Ain and Hamidon, Mohd Nizar and Sulaiman, Nasri and Bukhori, Muhammad Faiz},
    journal={Mitteilungen Klosterneuburg},
    volume={64},
    number={3},
    pages={234--245},
    year={2014}
    }
  • H. Hussin, N. Soin, M. Bukhori, S. Wan Muhamad Hatta, and Y. Abdul Wahab, “Effects of gate stack structural and process defectivity on high-dielectric dependence of nbti reliability in 32 nm technology node pmosfets,” The scientific world journal, vol. 2014, 2014.
    [Bibtex]
    @article{hussin2014effects,
    title={Effects of Gate Stack Structural and Process Defectivity on High-Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs},
    author={Hussin, H and Soin, N and Bukhori, MF and Wan Muhamad Hatta, S and Abdul Wahab, Y},
    journal={The Scientific World Journal},
    volume={2014},
    year={2014},
    publisher={Hindawi}
    }
  • A. A. A. Rahni, M. F. Bukhori, and N. Zainal, “Pembangunan sistem pemantauan kehadiran pelajar (sams) atas talian berdasarkan kod qr dan peranti mudah alih,” in Kongres pengajaran dan pembelajaran ukm 2013, 2014.
    [Bibtex]
    @inproceedings{rahni2014pembangunan,
    title={Pembangunan Sistem Pemantauan Kehadiran Pelajar (SAMS) atas talian berdasarkan Kod QR dan Peranti Mudah Alih},
    author={Rahni, Ashrani A. Abd. and Bukhori, Muhammad Faiz and Zainal, Nasharuddin},
    booktitle={Kongres Pengajaran dan Pembelajaran UKM 2013},
    year={2014}
    }
  • M. F. Bukhori, “An overview of rf power amplifier techniques and effect of transistor scaling on its design parameters,” International journal of applied engineering research, vol. 9, iss. 2, p. 257–276, 2014.
    [Bibtex]
    @article{bukhori2014overview,
    title={An Overview of RF Power Amplifier Techniques and Effect of Transistor Scaling on its Design Parameters},
    author={Bukhori, Muhammad Faiz},
    journal={International Journal of Applied Engineering Research},
    volume={9},
    number={2},
    pages={257--276},
    year={2014}
    }
  • B. Bais, W. M. D. W. Zaki, M. F. Bukhori, M. F. A. S. Shaarani, and A. M. Moubark, “Pembangunan platform kajian hubungkait latarbelakang pelajar dengan pencapaian di dalam kursus tahun 1 di jkees,” in Kongres pengajaran dan pembelajaran ukm 2013, 2014.
    [Bibtex]
    @inproceedings{bais2014pembangunan,
    title={Pembangunan Platform Kajian Hubungkait Latarbelakang Pelajar dengan Pencapaian di dalam Kursus Tahun 1 di JKEES},
    author={Bais, Badariah and Zaki, Wan Mimi Diyana Wan and Bukhori, Muhammad Faiz and Shaarani, Muhd. Fauzi Aminuddin Shazi and Moubark, Asraf Mohamed},
    booktitle={Kongres Pengajaran dan Pembelajaran UKM 2013},
    year={2014}
    }
  • K. Sopian, S. H. M. Ali, N. Zainal, M. F. Bukhori, and R. Nordin, Mega science 2.0 – electrical & electronics sector, 2014.
    [Bibtex]
    @misc{sopian2014mega,
    title={Mega Science 2.0 - Electrical \& Electronics Sector},
    author={Sopian, Kamaruzzaman and Ali, Sawal Hamid Md and Zainal, Nasharuddin and Bukhori, Muhammad Faiz and Nordin, Rosdiadee},
    journal={https://issuu.com/asmpub/docs/electrical\_\_\_electronics},
    year={2014}
    }
  • H. Hussin, A. Y. Wahab, S. Shahabuddin, N. Soin, and M. F. Bukhori, “The influence of sio2 interfacial layer thickness on nbti degradation mechanism of p-channel hfo2/aln gate mosfets,” in The 8th international conference on silicon epitaxy and heterostructures (icsi-8), 2013, p. 205–206.
    [Bibtex]
    @inproceedings{hussin2013influence,
    title={The influence of SiO2 interfacial layer thickness on NBTI degradation mechanism of p-channel HfO2/AlN gate MOSFETs},
    author={Hussin, H. and Wahab, Y. Abdul and Shahabuddin, S. and Soin, N. and Bukhori, M. F.},
    booktitle={The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)},
    pages={205--206},
    year={2013}
    }
  • A. Y. Wahab, H. Hussin, N. Soin, and M. F. Bukhori, “Aggressive junction-depth scaling for nbti reliability of metal gate electrode and high-k dielectrics advanced cmos technology,” in The 8th international conference on silicon epitaxy and heterostructures (icsi-8), 2013, p. 347–348.
    [Bibtex]
    @inproceedings{wahab2013aggressive,
    title={Aggressive Junction-Depth Scaling for NBTI Reliability of Metal Gate Electrode and High-K Dielectrics Advanced CMOS Technology},
    author={Wahab, Y. Abdul and Hussin, H. and Soin, N. and Bukhori, M. F.},
    booktitle={The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)},
    pages={347--348},
    year={2013}
    }
  • H. Hussin, M. Muhamad, A. Y. Wahab, S. Shahabuddin, N. Soin, and M. Bukhori, “A study using two stage nbti model for 32 nm high-k pmosfet,” in 2013 ieee international conference of electron devices and solid-state circuits, 2013, p. 1–2.
    [Bibtex]
    @inproceedings{hussin2013study,
    title={A study using two stage NBTI model for 32 nm high-k PMOSFET},
    author={Hussin, H and Muhamad, M and Wahab, Y Abdul and Shahabuddin, S and Soin, N and Bukhori, MF},
    booktitle={2013 IEEE International Conference of Electron Devices and Solid-state Circuits},
    pages={1--2},
    year={2013},
    organization={IEEE}
    }
  • J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, P. J. Roussel, T. Grasser, A. Asenov, and G. Groeseneken, “Impact of individual charged gate-oxide defects on the entire $ I_ $\$D$\$ $–$ V_ $\$G$\$ $ characteristic of nanoscaled fets,” Ieee electron device letters, vol. 33, iss. 6, p. 779–781, 2012.
    [Bibtex]
    @article{franco2012impact,
    title={Impact of Individual Charged Gate-Oxide Defects on the Entire $ I\_ $\{$D$\}$ $--$ V\_ $\{$G$\}$ $ Characteristic of Nanoscaled FETs},
    author={Franco, Jacopo and Kaczer, Ben and Toledano-Luque, Mar{\'\i}a and Bukhori, Muhammad Faiz and Roussel, Philippe J and Grasser, Tibor and Asenov, Asen and Groeseneken, Guido},
    journal={IEEE Electron device letters},
    volume={33},
    number={6},
    pages={779--781},
    year={2012},
    publisher={IEEE}
    }
  • B. Kaczer, J. Franco, M. Toledano-Luque, P. J. Roussel, M. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, and G. Groeseneken, “The relevance of deeply-scaled fet threshold voltage shifts for operation lifetimes,” in 2012 ieee international reliability physics symposium (irps), 2012, p. 5A–2.
    [Bibtex]
    @inproceedings{kaczer2012relevance,
    title={The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes},
    author={Kaczer, Ben and Franco, Jacopo and Toledano-Luque, Maria and Roussel, Ph J and Bukhori, MF and Asenov, Asen and Schwarz, Benedikt and Bina, Markus and Grasser, Tibor and Groeseneken, Guido},
    booktitle={2012 IEEE International Reliability Physics Symposium (IRPS)},
    pages={5A--2},
    year={2012},
    organization={IEEE}
    }
  • J. Franco, B. Kaczer, M. Toledano-Luque, P. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, and others, “Impact of single charged gate oxide defects on the performance and scaling of nanoscaled fets,” in 2012 ieee international reliability physics symposium (irps), 2012, p. 5A–4.
    [Bibtex]
    @inproceedings{franco2012impact,
    title={Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs},
    author={Franco, Jacopo and Kaczer, Ben and Toledano-Luque, Maria and Roussel, Ph J and Mitard, Jerome and Ragnarsson, L-{\AA} and Witters, Liesbeth and Chiarella, Thomas and Togo, Mitsuhiro and Horiguchi, Naoto and others},
    booktitle={2012 IEEE International Reliability Physics Symposium (IRPS)},
    pages={5A--4},
    year={2012},
    organization={IEEE}
    }
  • B. Kaczer, J. Franco, M. Toledano-Luque, P. J. Roussel, G. Groeseneken, M. Bukhori, A. Asenov, B. Schwarz, M. Bina, and T. Grasser, “2012 irps paper awards recognized at 2013 irps best paper award,” , 2012.
    [Bibtex]
    @article{kaczer20122012,
    title={2012 IRPS Paper Awards Recognized at 2013 IRPS Best Paper Award},
    author={Kaczer, B and Franco, J and Toledano-Luque, M and Roussel, Ph J and Groeseneken, G and Bukhori, MF and Asenov, A and Schwarz, B and Bina, M and Grasser, T},
    year={2012}
    }
  • N. Zainal, M. F. Bukhori, R. Nordin, and M. H. Baharuddin, “Pembentangan hasil projek latihan ilmiah melalui seminar selari,” in Seminar pendidikan kejuruteraan dan alam bina ukm 2012, 2012, p. 233–237.
    [Bibtex]
    @inproceedings{zainal2012pembentangan,
    title={Pembentangan Hasil Projek Latihan Ilmiah Melalui Seminar Selari},
    author={Zainal, Nasharuddin and Bukhori, Muhammad Faiz and Nordin, Rosdiadee and Baharuddin, Mohd. Hafiz},
    booktitle={Seminar Pendidikan Kejuruteraan dan Alam Bina UKM 2012},
    pages={233--237},
    year={2012}
    }
  • N. A. Nayan, M. H. Baharuddin, and M. F. Bukhori, “Kajian keberkesanan dan cadangan penambahbaikan isi kandungan lawatan industri yang memaksimumkan sumber untuk mencapai hasil pembelajaran program,” in Seminar pendidikan kejuruteraan dan alam bina ukm 2012, 2012, p. 1–9.
    [Bibtex]
    @inproceedings{nayan2012kajian,
    title={Kajian keberkesanan dan cadangan penambahbaikan isi kandungan lawatan industri yang memaksimumkan sumber untuk mencapai hasil pembelajaran program},
    author={Nayan, Nazrul Anuar and Baharuddin, Mohd Hafiz and Bukhori, Muhammad Faiz},
    booktitle={Seminar Pendidikan Kejuruteraan dan Alam Bina UKM 2012},
    pages={1--9},
    year={2012}
    }
  • M. F. Bukhori, N. A. Kamsani, A. Asenov, and N. A. Nayan, “Accurate capturing of the statistical aspect of nbti/pbti variability into statistical compact models,” Microelectronics journal, vol. 43, iss. 11, p. 793–801, 2012.
    [Bibtex]
    @article{bukhori2012accurate,
    title={Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models},
    author={Bukhori, Muhammad Faiz and Kamsani, Noor Ain and Asenov, Asen and Nayan, Nazrul Anuar},
    journal={Microelectronics Journal},
    volume={43},
    number={11},
    pages={793--801},
    year={2012},
    publisher={Elsevier}
    }
  • M. F. Bukhori, “Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability,” PhD Thesis, 2011.
    [Bibtex]
    @phdthesis{bukhori2011simulation,
    title={Simulation of charge-trapping in nano-scale MOSFETs in the presence of random-dopants-induced variability},
    author={Bukhori, Muhammad Faiz},
    year={2011},
    school={University of Glasgow}
    }
  • M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, and A. Asenov, “‘atomistic’simulation of rts amplitudes due to single and multiple charged defect states and their interactions,” in 2010 ieee international integrated reliability workshop final report, 2010, p. 76–79.
    [Bibtex]
    @inproceedings{bukhori2010atomistic,
    title={‘Atomistic’simulation of RTS amplitudes due to single and multiple charged defect states and their interactions},
    author={Bukhori, Muhammad Faiz and Grasser, Tibor and Kaczer, Ben and Reisinger, Hans and Asenov, Asen},
    booktitle={2010 IEEE International Integrated Reliability Workshop Final Report},
    pages={76--79},
    year={2010},
    organization={IEEE}
    }
  • M. F. Bukhori, S. Roy, and A. Asenov, “Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants,” Ieee transactions on electron devices, vol. 57, iss. 4, p. 795–803, 2010.
    [Bibtex]
    @article{bukhori2010simulation,
    title={Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants},
    author={Bukhori, Muhammad Faiz and Roy, Scott and Asenov, Asen},
    journal={IEEE transactions on electron devices},
    volume={57},
    number={4},
    pages={795--803},
    year={2010},
    publisher={IEEE}
    }
  • M. F. Bukhori, A. R. Brown, S. Roy, and A. Asenov, “Simulation of statistical aspects of reliability in nano cmos transistors,” in 2009 ieee international integrated reliability workshop final report, 2009, p. 82–85.
    [Bibtex]
    @inproceedings{bukhori2009simulation,
    title={Simulation of statistical aspects of reliability in nano CMOS transistors},
    author={Bukhori, Muhammad Faiz and Brown, Andrew R and Roy, Scott and Asenov, Asen},
    booktitle={2009 IEEE International Integrated Reliability Workshop Final Report},
    pages={82--85},
    year={2009},
    organization={IEEE}
    }
  • M. F. Bukhori, S. Roy, and A. Asenov, “Statistical simulation of rts amplitude distribution in realistic bulk mosfets subject to random discreet dopants.,” in 2008 9th international conference on ultimate integration of silicon, 2008, p. 171–174.
    [Bibtex]
    @inproceedings{bukhori2008statistical,
    title={Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants.},
    author={Bukhori, Muhammad Faiz and Roy, Scott and Asenov, Asen},
    booktitle={2008 9th International Conference on Ultimate Integration of Silicon},
    pages={171--174},
    year={2008},
    organization={IEEE}
    }
  • M. F. Bukhori, S. Roy, and A. Asenov, “Statistical aspects of reliability in bulk mosfets with multiple defect states and random discrete dopants,” Microelectronics reliability, vol. 48, iss. 8-9, p. 1549–1552, 2008.
    [Bibtex]
    @article{bukhori2008statistical,
    title={Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants},
    author={Bukhori, Muhammad Faiz and Roy, Scott and Asenov, Asen},
    journal={Microelectronics Reliability},
    volume={48},
    number={8-9},
    pages={1549--1552},
    year={2008},
    publisher={Pergamon}
    }
  • A. Asenov, S. Roy, R. Brown, G. Roy, C. Alexander, C. Riddet, C. Millar, B. Cheng, A. Martinez, N. Seoane, and others, “Advanced simulation of statistical variability and reliability in nano cmos transistors,” in 2008 ieee international electron devices meeting, 2008, p. 1–1.
    [Bibtex]
    @inproceedings{asenov2008advanced,
    title={Advanced simulation of statistical variability and reliability in nano CMOS transistors},
    author={Asenov, A and Roy, S and Brown, RA and Roy, G and Alexander, C and Riddet, C and Millar, C and Cheng, B and Martinez, A and Seoane, N and others},
    booktitle={2008 IEEE International Electron Devices Meeting},
    pages={1--1},
    year={2008},
    organization={IEEE}
    }
  • M. S. Ab-Rahman, A. A. Ehsan, H. Hussin, M. F. Bukhori, and S. Shaari, “Optical cross add and drop multiplexer (oxadm) in cwdm ring network,” Journal of optical communications, vol. 28, iss. 3, p. 201–205, 2007.
    [Bibtex]
    @article{ab2007optical,
    title={Optical cross add and drop multiplexer (OXADM) in CWDM ring network},
    author={Ab-Rahman, Mohammad Syuhaimi and Ehsan, Abang Annuar and Hussin, Hayati and Bukhori, Muhammad Faiz and Shaari, Sahbudin},
    journal={Journal of optical communications},
    volume={28},
    number={3},
    pages={201--205},
    year={2007},
    publisher={De Gruyter}
    }
  • M. S. Ab-Rahman, W. N. W. Ibrahim, M. F. Bukhori, and S. Shaari, “Oxadm: feasibility of network security and migration,” in 2007 asia-pacific conference on applied electromagnetics, 2007, p. 1–5.
    [Bibtex]
    @inproceedings{ab2007oxadm,
    title={OXADM: Feasibility of network security and migration},
    author={Ab-Rahman, Mohammad Syuhaimi and Ibrahim, Wan Nurdiana Wan and Bukhori, Muhammad Faiz and Shaari, Sahbudin},
    booktitle={2007 Asia-Pacific Conference on Applied Electromagnetics},
    pages={1--5},
    year={2007},
    organization={IEEE}
    }
  • M. F. Bukhori, H. Husain, M. A. M. Ali, N. Misran, M. Abdullah, and B. Bais, “Kajian keberkesanan kaedah penilaian hasil program kejuruteraan elektrik,” in Prosiding seminar pengajaran dan pembelajaran berkesan fakulti kejuruteraan ukm 2006, 2006, p. 143–147.
    [Bibtex]
    @inproceedings{bukhori2006kajian,
    title={Kajian Keberkesanan kaedah Penilaian Hasil Program Kejuruteraan Elektrik},
    author={Bukhori, Muhammad Faiz and Husain, Hafizah and Ali, Mohd. Alauddin Mohd. and Misran, Norbahiah and Abdullah, Mardina and Bais, Badariah},
    booktitle={Prosiding Seminar Pengajaran dan Pembelajaran Berkesan Fakulti Kejuruteraan UKM 2006},
    pages={143--147},
    year={2006}
    }
  • H. Hussin, N. Soin, and M. Bukhori, “Effects of sub-threshold operation on 32 nm technology node pmosfets evaluated from the perspective of two-stage nbti model.”
    [Bibtex]
    @article{hussineffects,
    title={Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of two-stage NBTI model},
    author={Hussin, H and Soin, N and Bukhori, MF}
    }
  • M. Bukhori, M. Mohd-Nor, M. Tahir, and A. Ismail, “Evaluation of architecture student classroom communication at universiti kebangsaan malaysia.”
    [Bibtex]
    @article{bukhorievaluation,
    title={EVALUATION OF ARCHITECTURE STUDENT CLASSROOM COMMUNICATION AT UNIVERSITI KEBANGSAAN MALAYSIA},
    author={Bukhori, MF and Mohd-Nor, MFI and Tahir, MM and Ismail, AH}
    }
  • H. Hussin, N. Soin, and M. Bukhori, “Investigation on impact of different defects based on different trap energy level in the framework of two-stage nbti model.”
    [Bibtex]
    @article{hussininvestigation,
    title={Investigation on Impact of Different Defects based on Different Trap Energy Level in the Framework of Two-Stage NBTI model},
    author={Hussin, H and Soin, N and Bukhori, MF}
    }
  • H. Hussin, N. Soin, and M. Bukhori, “Promising integrated two-stage nbti model for accurate lifetime prediction of nano-scale hkmg pmosfets.”
    [Bibtex]
    @article{hussinpromising,
    title={Promising Integrated Two-stage NBTI Model for Accurate Lifetime Prediction of Nano-Scale HKMG PMOSFETs},
    author={Hussin, H and Soin, N and Bukhori, MF}
    }