Sains Malaysiana 46(10)(2017): 1943–1949

http://dx.doi.org/10.17576/jsm-2017-4610-33

 

Analisis Arus-Voltan bagi Pengubahsuaian Proses Fabrikasi Sel Suria Silikon Jenis-P ke atas Wafer Silikon Jenis-N

(Current-Voltage Analysis for the Adaption of P-Type Silicon Solar Cell Fabrication Process onto N-Type Silicon Wafer)

 

SUHAILA SEPEAI*, WAN ZULHAFIZHAZUAN, CHEOW SIU LEONG, N.A. LUDIN, M.A. IBRAHIM, K. SOPIAN & SALEEM H. ZAIDI

 

Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan, Malaysia

 

Received: 21 June 2017/Accepted: 30 August 2017

 

ABSTRAK

Sel suria adalah peranti semikonduktor yang menukar tenaga matahari kepada tenaga elektrik. Sel suria generasi pertama terdiri dari sel suria silikon (Si). Pada masa ini, hampir 90% daripada pasaran pengeluaran fotovolta (PV) adalah berdasarkan wafer Si. Ini disebabkan oleh kecekapan dan ketahanan yang tinggi serta jangka hayat yang lama iaitu selama 30 tahun. Proses pemfabrikasian piawai bagi sel suria Si dimulakan dengan proses pencucian dan penteksturan wafer Si, difusi Fosforus untuk pembentukan pemancar, pembentukan elektrod atas dan bawah melalui proses cetakan skrin dan proses pembakaran yang melengkapkan fabrikasi sel suria. Dalam industri, proses piawai ini dilakukan pada wafer Si jenis-p. Wafer jenis-n pula mempunyai potensi yang tinggi untuk menghasilkan sel suria Si yang berkecekapan tinggi. Namun, proses untuk menghasilkan sel suria silikon atas Si wafer jenis-n melalui proses yang lebih rumit dan lama seperti dua peringkat proses difusi menjadikan wafer jenis-p digunakan secara meluas kerana dapat merendahkan kos pemfabrikasian. Dalam penyelidikan ini, analisis bagi arus-voltan bagi sel suria Si jenis-n yang difabrikasi menggunakan adaptasi proses fabrikasi piawai bagi wafer Si jenis-p akan dibincangkan. Daripada kajian simulasi menggunakan perisian PC1D, didapati bahawa kecekapan bagi sel suria jenis-p dan jenis-n yang difabrikasi dengan kaedah yang sama adalah 19.63% dan 20.16%. Manakala keputusan eksperimen menunjukkan kecekapan sebanyak 9.44% dan 5.51% bagi sel suria jenis-p dan jenis-n.

 

Kata kunci: Jenis-n; jenis-p; PC1D; sel suria Si; wafer Si

 

ABSTRACT

Solar cell is a semiconductor device that converts solar energy into electricity. First generation solar cells consist of silicon (Si) solar cells. Currently, almost 90% of the photovoltaic (PV) production market is based on Si wafer. This is due to the high efficiency, high durability and a longer life span of 30 years. The standard fabrication process for Si solar cells is initiated by washing and texturing the Si wafer, phosphorus diffusion for the formation of transmitters, the formation of top and bottom electrodes through screen printing and combustion process that completed the fabrication of solar cells. In industry, this standard process is performed on p-type Si wafer. On the other hand, the n-type wafer has a higher potential to produce high-efficiency solar cells. However, the process for producing Si solar cells on n-type Si wafer through a complicated and longer process, such as two diffusion process stages that lead to p-type wafers more widely used as it has a lower fabricating cost. In this study, the current-voltages of n-type Si solar cells fabricated using the adaptation of the standard fabrication process of p-type wafer is analyzed and discussed. From the simulation study using PC1D software, it was found that the efficiency of the p-type and n-type solar cells that were fabricated using the same method were 19.63% and 20.16%. While the experimental results showed efficiency of 9.44% and 5.51% of the p-type and n-type solar cells.

 

Keywords: n-type; p-type; PC1D; solar cell Si; wafer Si

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*Corresponding author; email: suhailas@ukm.edu.my

 

 

 

 

 

 

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