Sains Malaysiana 48(1)(2019): 209–216

http://dx.doi.org/10.17576/jsm-2019-4801-24

 

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

(Kesan Kadar Aliran Hidrogen Sepuh Lindap pada Struktur, Sifat Optik dan Elektrik Filem Fe Terdop In2O3 yang Disintesis Melalui Sol-Gel)

 

N.B. IBRAHIM*, N.F. ZULKIFLI, L.N. LAU, A.Z. ARSAD & N. YUSOP

 

School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

Received: 19 March 2018/Accepted: 16 August 2018

 

ABSTRACT

Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H2. FTIR studies showed the existence of an O-H bond in the range of 3000 - 4000 cm-1 and it was caused by the flow of H2 gas during the annealing process. The resistivity of In1.92Fe0.08O3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films.

 

Keywords: FTIR; H2 gas flow rate; iron doped indium oxide; thin film

 

ABSTRAK

Semikonduktor magnetik cair (DMSs) sentiasa menjadi tarikan utama untuk dikaji disebabkan penggunaannya yang meluas dalam spintronik. Kajian ini dijalankan untuk mengkaji kesan perbezaan aliran gas hidrogen sepuh lindap pada sifat fizikal filem Fe terdop indium oksida. Filem In1.92Fe0.08O3 telah disediakan melalui kaedah sol-gel diikuti dengan teknik salutan putaran. Kadar aliran gas hidrogen yang berlainan digunakan semasa proses penyepuh lindapan. Kesemua sampel menunjukkan orientasi tinggi pada arah (222) dan berstruktur polihablur. Saiz butiran bertambah apabila kadar aliran bertambah disebabkan pengurangan H2. Kajian FTIR menunjukkan kewujudan ikatan O-H dalam julat 3000 - 4000 cm-1 dan ia disebabkan oleh aliran gas H2 semasa proses penyepuh lindapan. Kerintangan filem nipis In1.92Fe0.08O3 menurun dan kepekatan pembawa meningkat dengan peningkatan kadar aliran. Kajian ini mempunyai keberertian pada sifat kebergantungan kepada saiz dan ikatan kimia dalam filem Fe terdop In2O3.

 

Kata kunci: Fe terdop indium oksida; filem nipis; FTIR; kadar aliran gas H2

REFERENCES

Arafat, M.M., Dinan, B., Akbar, S.A. & Haseeb, A. 2012. Gas sensors based on one dimensional nanostructured metal-oxides: A review. Sensors 12: 7207-7258.

Ayeshamariam, A., Bououdina, M. & Sanjeeviraja, C. 2013. Optical, electrical and sensing properties of In2O3. Materials Science in Semiconductor Processing 16: 686-695.

Beena, D., Lethy, K.J., Vinodkumar, R., Detty, A.P., Mahadevan Pillai, V.P. & Ganesan, V. 2010. Photoluminescence in laser ablated nanostructured indium oxide thin films. Journal of Alloys and Compounds 489: 215-223.

Cao, H., Qiu, X., Liang, Y., Zhu, Q. & Zhao, M. 2003. Room-temperature ultraviolet-emitting In2O3 nanowires. Applied Physics Letters 83: 761-763.

Dietl, T., Ohno, H., Matsukura, F., Cibert, J. & Ferrand, D. 2000. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science 287: 1019-1022.

Flores-Mendoza, M.A., Castanedo-Perez, R., Torres-Delgado, G., Márquez Marín, J. & Zelaya-Angel, O. 2008. Influence of the annealing temperature on the properties of undoped indium oxide thin films obtained by the sol-gel method. Thin Solid Films 517: 681-685.

Huang, Q., Liu, Y., Yang, S., Zhao, Y. & Zhang, X. 2012. Hydrogen mediated self-textured zinc oxide films for silicon thin film solar cells. Solar Energy Materials & Solar Cells 103: 134-139.

Ibrahim, N.B., Baqiah, H. & Abdullah, M. 2013. High transparency iron doped indium oxide (In2-xFe xO3, x= 0.0, 0.05, 0.25, 0.35 and 0.45) films prepared by the sol-gel method. Sains Malaysiana 42(7): 961-966.

Korotcenkov, G., Brinzari, V., Golovanov, V., Cerneavschi, A., Matolin, V. & Tadd, A. 2004. Acceptor-like behavior of reducing gases on the surface of n-type In2O3. Applied Surface Science 227: 122-131.

Lau, L.N., Ibrahim, N.B. & Baqiah, H. 2015. Influence of prucursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by sol-gel method. Applied Surface Science 345: 355-359.

Majeed Khan, M.A., Khan, W., Ahamed, M., Alsalhi, M.S. & Ahmed, T. 2013. Crystallite structural, electrical and luminescent characteristics of thin films of In2O3 nanocubes synthesized by spray pyrolysis. Electronic Materials Letters 9(1): 53-57.

Phanichphant, S. 2014. Semiconductor metal oxides as hydrogen gas sensors. Procedia Engineering 87: 795-802.

Saikia, B.J. & Parthasarathy, G. 2010. Fourier transform infrared spectroscopic characterization of kaolinite from Assam and Meghalaya, Northeastern India. Journal of Modern Physics 1: 206-210.

Shannon, R.D. 1976. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallographica 32: 751-767.

Wang, F-H., Yang, C-F., Liou, J-C. & Chen, I-C. 2014. Effects of hydrogen on the optical and electrical characteristics of the sputter-deposited Al2O3-doped ZnO thin films. Journal of Nanomaterials 2014: 857614.

Wolf, S., Awschalom, D., Buhrman, R., Daughton, J., Von Molnar, S., Roukes, M., Chtchelkanova, A.Y. & Treger, D. 2001. Spintronics: A spin-based electronics vision for the future. Science 294: 1488-1495.

Yuan, Z., Zhu, X., Wang, X., Cai, X., Zhang, B., Qiu, D. & Wu, H. 2011. Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors. Thin Solid Films 519: 3254-3258.

Yoo, Y.K., Xue, Q., Lee, H-C., Cheng, S., Xiang, X-D., Dionne, G.F., Xu, S., He, J., Chu, Y.S. & Preite, S. 2005. Bulk synthesis and high-temperature ferromagnetism of (In1− xFex) 2O3− σ with Cu co-doping. Applied Physics Letters 86: 042506.

Zhu, B.L., Wang, J., Zhu, S.J., Wu, J., Wu, R., Zeng, D.W. & Xie, C.S. 2011. Influence of hydrogen introduction on structure and properties of ZnO thin films during sputtering and post-annealing. Thin Solid Films 519: 3809-3815.

Zulkifli, N.F. 2015. Kesan kadar aliran gas hidrogen ke atas mikrostruktur, ikatan kimia, sifat elektrik dan sifat optik filem In1.92Fe0.08O3 yang disediakan melalui kaedah sol-gel. Master’s dissertation. Bangi: Universiti Kebangsaan Malaysia (Unpublished).

 

*Corresponding author; email: baayah@ukm.edu.my

 

 

 

 

previous