For this research theme, the group focuses on the development of growth technologies for compound semiconductor materials using molecular beam epitaxy (MBE) and fabrication technologies of high speed devices. Other important activities include investigation of properties and physics of new advanced materials. Collaboration with Telekom Research and Development (TMR&D) in III-V compound semiconductor research has been in progress since 1997. High speed devices such as high electron mobility transistor (HEMT), pseudomorphic HEMT (PHEMT), metamorphic HEMT (MHEMT) and VCSELs are studied especially about the structure of devices and characteristics of epitaxial layers. In advance, tailoring to future needs of green communication technology. Future research studies planned include development of high efficiency PV cells and high speed photodetectors heterostructure materials.
Research Projects
- Epitaxial growth of MHEMT layer using Molecular Beam Epitaxy
- Epitaxial growth of GINA structure for VCSEL