Dr. Abdul Rahman Mohmad

staff rahman

Research Fellow / Senior Lecturer

Phone. +603 89118560
E-Mail: armohmad@ukm.edu.my

 

RESEARCH INTEREST:

• Synthesis and applications of 2-dimensional (2D) materials
• Chemical vapor deposition of layered transition metal dichalcogenides (TMDs)
• Growth and characterization of III-V semiconductors
• Molecular beam epitaxy (MBE)

 

EDUCATION:

2004 – 2008 : MEng (Microelectronics), University of Sheffield
2009 – 2013 : PhD (Semiconductor materials and devices), University of Sheffield

 

PROFESSIONAL EXPERIENCE:

Post-doctoral associates, Rutgers University, USA, 2016-2018
Visiting scholar, University of Sheffield, UK, Aug – Nov 2014

 

RESEARCH GRANTS:

1. FRGS, 15/08/2017 – 14/01/2020, RM 81,000 (co-investigator)
2. MRUN, 01/10/2015 – 30/09/2018, RM 124,000 (co-investigator)
3. TOP DOWN, 01/06/2015 – 31/05/2018, RM300,000 (co-investigator)
4. LAUREATE, 01/01/2014 – 31/12/2015, RM 500,000 (co-investigator)
5. GGPM, 01/08/2014 – 31/07/2016, RM 40,000 (project leader)
6. ICONIC, 01/01/2014 – 31/12/2016, RM421,400 (co-investigator)

 

JOURNAL PUBLICATION:

  1. N. A. N Azmy, A. A. A. Bakar, N. Arsad, S. Idris, A. R. Mohmad, A. A Hamid, “Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor”, Applied Surface Science 392, 1134 (2017)
  2. M. Alizadeh, V. Ganesh, B. T. Goh, C. F. Dee, A. R. Mohmad, S. A. Rahman, “Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation, Applied Surface Science 378, 150 (2016)
  3. R. D. Richards, C. J. Hunter, F. Bastiman, A. R. Mohmad, J. P. R. David, “Telecommunication wavelength GaAsBi light emitting diodes”, IET Optoelectronics 10, 34 (2016)
  4. A. R. Mohmad, F. Bastiman, C. J. Hunter, F. Harun, D. F. Reyes, D. L. Sales, D. Gonzalez, R. D. Richards, J. P. R. David, B. Y. Majlis, “Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures” Semiconductor Science and Technology 30, 094018 (2015)
  5. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David and B. Y. Majlis, “Localization effects and band gap of GaAsBi alloys”, Phys. Stat. Solidi. B 251 1276 (2014)
  6. R. D. Richards, F. Bastiman, C. J. Hunter, D. F. Mendes, A. R. Mohmad, J. S. Roberts, and J. P. R. David, “Molecular beam epitaxy growth of GaAsBi using As2 and As4”, J. Cryst. Growth 390 120 (2014)
  7. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Room temperature photoluminescence enhancement in GaAsBi alloys”, Phys. Stat. Solidi. C 9 259 (2012)
  8. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng and J. P. R. David, “Effects of rapid thermal annealing on GaAsBi alloys”, Appl. Phys. Lett 101 012106 (2012)
  9. F. Bastiman, A. R. Mohmad, J. S. Ng, S. J. Sweeney and J. P. R. David, “Non – stoichiometric GaAsBi / GaAs (100) molecular beam epitaxy growth”, J. Cryst. Growth 338 57 (2012)
  10. C. J. Hunter, F. Bastiman, A. R. Mohmad, R. Richards, J. S. Ng, S. J. Sweeney and J. P. R. David, “Absorption characteristics of GaAsBi/GaAs diodes in the near infra-red”, IEEE Photon. Technol. Lett. 24 2191 (2012)
  11. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Photoluminescence investigation of high quality GaAsBi on GaAs”, Appl. Phys. Lett. 98 122107 (2011)
  12. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney and J. P. R. David, “The effect of Bi composition to the optical quality of GaAsBi”, Appl. Phys. Lett. 99 042107 (2011)