Dr. Abdul Rahman Mohmad

staff rahman

Research Fellow / Senior Lecturer

Phone. +603 89118558
E-Mail: armohmad@ukm.edu.my
Google Scholar Profile
SCOPUS Profile

 

RESEARCH INTEREST:

• Synthesis and applications of 2-dimensional (2D) materials
• Chemical vapor deposition of layered transition metal dichalcogenides (TMDs)
• Growth and characterization of III-V semiconductors
• Molecular beam epitaxy (MBE)

 

EDUCATION:

MEng (Microelectronics), University of Sheffield
PhD (Semiconductor materials and devices), University of Sheffield

 

PROFESSIONAL EXPERIENCE:

Post-doctoral associates, Rutgers University, USA, 2016-2018
Visiting scholar, University of Sheffield, UK, Aug – Nov 2014

 

RESEARCH HIGHLIGHT:

The first Malaysian to publish as a first author in the prestigious journal Nature Materials. Nature Materials is the best journal (rank no. 1) in Physical Chemistry and Applied Physics with impact factor of 38.9. The title of the article is “Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”. In this article, Dr. Abdul Rahman reported a low cost catalyst which is capable of generating current density as high as platinum. This work has the potential to reduce cost of producing hydrogen making it commercially attractive.

“Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”, Nature Materials 18, 1309 (2019)

 

APPEARANCE IN MEDIA:

  1. New Straits Times, “Paper on hydrogen production by UKM lecturer makes top journal”, 25 Sept. 2019
  2. Utusan Malaysia, “Artikel saintis UKM dalam jurnal tersohor”, 19 Sept. 2019
  3. Berita Harian, “UKM muncul saintis pertama pengarang jurnal Nature Materials”, 5 Sept. 2019
  4. BERNAMA radio interview for The Skillz slot on “Penyelidik bertaraf global”, 5 Feb 2020

 

RESEARCH GRANTS (Total = RM2.2 million, head of research grant = 3)

  1. DIP, 1/10/2019 – 30/9/2021, RM100,000 (co-investigator)
  2. FRGS, 1/9/2019 – 30/11/2021, RM97,000 (project leader)
  3. FRGS, 1/9/2019 – 30/11/2021, RM125,000 (co-investigator)
  4. FRGS, 1/1/2019 – 31/3/2021, RM56,200 (co-investigator)
  5. GUP, 15/8/2018 – 14/11/2020, RM68,000 (project leader)
  6. FRGS, 15/08/2017 – 14/01/2020, RM 81,000 (co-investigator)
  7. MRUN, 01/10/2015 – 30/09/2018, RM 124,000 (co-investigator)
  8. TOP DOWN, 01/06/2015 – 31/05/2018, RM300,000 (co-investigator)
  9. LAUREATE, 01/01/2014 – 31/12/2015, RM 500,000 (co-investigator)
  10. GGPM, 01/08/2014 – 31/07/2016, RM 40,000 (project leader)
  11. ICONIC, 01/01/2014 – 31/12/2016, RM421,400 (co-investigator)

 

SELECTED JOURNAL PUBLICATIONS:

  1. H. Johari, M. S. Sirat, M. A. Mohamed, S. N. F. Mohd Nasir, M. A. Mat Teridi, A. R. Mohmad, “Effects of Mo vapor concentration on the morphology of vertically standing MoS2 nanoflakes”, Nanotechnology 31, 305710 (2020)
  2. Yang, A. R. Mohmad, Y. Wang, R. Fullon, X. Song, F. Zhao, I. Bozkurt, M. Augustin, E. J. G. Santos, H. S. Shin, W. Zhang, D. Voiry, H. Y. Jeong, M. Chhowalla, “Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution”, Nature Materials 18, 1309 (2019)
  3. S. Zaini, M. A. Kamarudin, J. L. Ying Chyi, S. A. Alang Ahmad, A. R. Mohmad, “Temperature and power dependence of photoluminescence in PbS quantum dots nanoparticles”, Sains Malaysiana 48, 1281 (2019)
  4. N. A. N Azmy, A. A. A. Bakar, N. Arsad, S. Idris, A. R. Mohmad, A. A Hamid, “Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor”, Applied Surface Science 392, 1134 (2017)
  5. M. Alizadeh, V. Ganesh, B. T. Goh, C. F. Dee, A. R. Mohmad, S. A. Rahman, “Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation, Applied Surface Science 378, 150 (2016)
  6. R. D. Richards, C. J. Hunter, F. Bastiman, A. R. Mohmad, J. P. R. David, “Telecommunication wavelength GaAsBi light emitting diodes”, IET Optoelectronics 10, 34 (2016)
  7. A. R. Mohmad, F. Bastiman, C. J. Hunter, F. Harun, D. F. Reyes, D. L. Sales, D. Gonzalez, R. D. Richards, J. P. R. David, B. Y. Majlis, “Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures” Semiconductor Science and Technology 30, 094018 (2015)
  8. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David and B. Y. Majlis, “Localization effects and band gap of GaAsBi alloys”, Phys. Stat. Solidi. B 251 1276 (2014)
  9. R. D. Richards, F. Bastiman, C. J. Hunter, D. F. Mendes, A. R. Mohmad, J. S. Roberts, and J. P. R. David, “Molecular beam epitaxy growth of GaAsBi using As2 and As4”, J. Cryst. Growth 390 120 (2014)
  10. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Room temperature photoluminescence enhancement in GaAsBi alloys”, Phys. Stat. Solidi. C 9 259 (2012)
  11. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng and J. P. R. David, “Effects of rapid thermal annealing on GaAsBi alloys”, Appl. Phys. Lett 101 012106 (2012)
  12. F. Bastiman, A. R. Mohmad, J. S. Ng, S. J. Sweeney and J. P. R. David, “Non – stoichiometric GaAsBi / GaAs (100) molecular beam epitaxy growth”, J. Cryst. Growth 338 57 (2012)
  13. C. J. Hunter, F. Bastiman, A. R. Mohmad, R. Richards, J. S. Ng, S. J. Sweeney and J. P. R. David, “Absorption characteristics of GaAsBi/GaAs diodes in the near infra-red”, IEEE Photon. Technol. Lett. 24 2191 (2012)
  14. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David, “Photoluminescence investigation of high quality GaAsBi on GaAs”, Appl. Phys. Lett. 98 122107 (2011)
  15. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney and J. P. R. David, “The effect of Bi composition to the optical quality of GaAsBi”, Appl. Phys. Lett. 99 042107 (2011)